[1]
|
国家信息中心. 第三届大容量光存储技术研讨会暨中国大数据光存储产业联盟发起大会在京召开院士建议: “大数据光存储研发与应用”急需上升为国家战略[J]. 中国信息界, 2014(5): 93-94.
|
[2]
|
干福熹, 王阳. 突破光学衍射极限, 发展纳米光学和光子学[J]. 光学学报, 2011, 31(9): 57-65.
|
[3]
|
Hamann, H.F., Martin, Y.C. and Wickramasinghe, H.K. (2004) Thermally Assisted Recording beyond Traditional Limits. Applied Physics Letters, 84, 810-812. https://doi.org/10.1063/1.1644924
|
[4]
|
宋志棠, 刘波, 封松林. 纳米相变存储技术研究进展[J]. 功能材料与器件学报, 2008, 14(1): 14-18.
|
[5]
|
Ovshinsky, S.R. (1968) Reversible Electrical Switching Phenomena in Disordered Structures. Physical Review Letters, 21, 1450-1453. https://doi.org/10.1103/PhysRevLett.21.1450
|
[6]
|
Kolobov, A.V., Fons, P., Frenkel, A.I., Ankudinov, A.L., Tominaga, J. and Uruga, T. (2004) Understanding the Phase-Change Mechanism of Rewritable Optical Media. Nature Materials, 3, 703-708.
https://doi.org/10.1038/nmat1215
|
[7]
|
Hegedüs, J. and Elliott, S.R. (2008) Microscopic Origin of the Fast Crystallization Ability of Ge-Sb-Te Phase-Change Memory Materials. Nature Materials, 7, 399-405. https://doi.org/10.1038/nmat2157
|
[8]
|
翟凤潇, 梁广飞, 王阳, 吴谊群. 纳秒单脉冲激光诱导AgInSbTe薄膜的相变特性[J]. 光学学报, 2012, 32(6): 316-320.
|
[9]
|
Afonso, C.N. and Solis, J.C.F. (1992) Ultrafast Reversible Phase Change in Ge0.1Sb0.9 Films for Erasable Optical Storage. Applied Physics Letters, 60, 3123-3126. https://doi.org/10.1063/1.106772
|
[10]
|
Morilla, M.C., Solís, J. and Afonso, C.N. (1997) Phase Change Cycling for Erasable Optical Storage Driven by Ultrashort Laser Pulses. Japanese Journal of Applied Physics, 36, L1015-L1018. https://doi.org/10.1143/JJAP.36.L1015
|
[11]
|
Ohta T. (2001) Phase-Change Optical Memory Promotes the DVD Optical Disk. Journal of Optoelectronics and Advanced Materials, 3, 609-626.
|
[12]
|
Siegel, J., Schropp, A., Solis, J., Afonso, C.N. and Wuttig, M. (2004) Rewritable Phase-Change Optical Recording in Ge2Sb2Te5 Films Induced by Picosecond Laser Pulses. Applied Physics Letters, 84, 2250-2252.
https://doi.org/10.1063/1.1689756
|
[13]
|
Wang, Q.F., Shi, L.P., Wang, Z.B., Lan, B., Yi, K.J., Hong, M.H., et al. (2003) Ultrafast Phase Transitions in Ge1Sb2Te4 Films Induced by Femtosecond Laser Beam. Optical Data Storage 2003 International Society for Optics and Photonics, 5069, 165-173. https://doi.org/10.1117/12.532649
|
[14]
|
Vijaya Kumar, B.V.K., Wang, Q., Kobori, H., Shi, L., Huang, S., Miao, X., et al. (2004) Phase Transformation of Ge1Sb4Te7 Films Induced by Single Femtosecond Pulse. Optical Data Storage 2004 International Society for Optics and Photonics, 5380, 403. https://doi.org/10.1117/12.557108
|
[15]
|
Wang, Q.F. (2005) Ultrafast Dynamics and Phase Changes in Phase Change Materials Triggered by Femtosecond Laser. PHD Thesis, National University of Singapore, Singapore.
|
[16]
|
Huang, S.M., Sun, Z., Jin, C.X., Zhu, H.B., Yao, Y., Chen, Y.W., et al. (2006) Phase Transformations Induced in Ge1Sb2Te4 Films by Single Femtosecond Pulses. Materials Science and Engineering: B, 131, 88-93.
https://doi.org/10.1016/j.mseb.2006.03.040
|
[17]
|
Huang, S.M., Sun, Z., Jin, C.X., Huang, S.Y. and Chen, Y.W. (2006) Phase Changes in Ge1Sb2Te4 Films Induced by Single Femtosecond Laser Pulse Irradiation. Transactions of Nonferrous Metals Society of China, 16, s226-s231.
https://doi.org/10.1016/S1003-6326(06)60180-5
|
[18]
|
Konishi, M., Santo, H., Hongo, Y., Tajima, K., Hosoi, M. and Saiki, T. (2010) Ultrafast Amorphization in Ge10Sb2Te13 Thin Film Induced by Single Femtosecond Laser Pulse. Applied Optics, 49, 3470-3473.
https://doi.org/10.1364/AO.49.003470
|
[19]
|
Zhai, F., Zuo, F., Huang, H., Wang, Y., Lai, T., Wu, Y., et al. (2010) Opti-cal-Electrical Properties of AgInSbTe Phase Change Thin Films under Single Picosecond Laser Pulse Irradiation. Journal of Non-Crystalline Solids, 356, 889-892.
https://doi.org/10.1016/j.jnoncrysol.2009.12.031
|
[20]
|
Van Vechten, J.A., Tsu, R. and Saris, F.W. (1979) Nonthermal Pulsed Laser Annealing of Si; Plasma Annealing. Physics Letters A, 74, 422-426. https://doi.org/10.1016/0375-9601(79)90242-1
|
[21]
|
Privitera, S., Bongiorno, C., Rimini, E. and Zonca, R. (2004) Crystal Nu-cleation and Growth Processes in Ge2Sb2Te5. Applied Physics Letters, 84, 4448-4450. https://doi.org/10.1063/1.1759063
|
[22]
|
Kalb, J., Spaepen, F. and Wuttig, M. (2004) Atomic Force Microscopy Measurements of Crystal Nucleation and Growth Rates in Thin Films of Amorphous Te Alloys. Applied Physics Letters, 84, 5240-5242.
https://doi.org/10.1063/1.1764591
|
[23]
|
Kooi, B.J., Groot, W.M.G. and De Hosson, J.T.M. (2004) In Situ Transmission Electron Microscopy Study of the Crystallization of Ge2Sb2Te5. Journal of Applied Physics, 95, 924-932. https://doi.org/10.1063/1.1636259
|
[24]
|
Tominaga, J. and Atoda, N. (1999) Study of the Crystallization of GeSbTe Films by Raman Spectroscopy. Japanese Journal of Applied Physics, 38, L322-L323.
|
[25]
|
Först, M., Dekorsy, T., Trappe, C., Laurenzis, M., Kurz, H. and Béchevet, B. (2000) Phase Change in Ge2Sb2Te5 Films Investigated by Coherent Phonon Spectroscopy. Applied Physics Letters, 77, 1964-1966.
https://doi.org/10.1063/1.1312861
|
[26]
|
Wełnic, W., Pamungkas, A., Detemple, R., Steimer, C., Blügel, S. and Wuttig, M. (2005) Unravelling the Interplay of Local Structure and Physical Properties in Phase-Change Materials. Nature Materials 5, 56-62.
https://doi.org/10.1038/nmat1539
|
[27]
|
Sun, Z., Zhou, J. and Ahuja, R. (2006) Structure of Phase Change Materials for Data Storage. Physical Review Letters, 96, Article ID: 055507. https://doi.org/10.1103/PhysRevLett.96.055507
|
[28]
|
Sun, Z., Zhou, J. and Ahuja, R. (2007) Unique Melting Behavior in Phase-Change Materials for Rewritable Data Storage. Physical Review Letters, 98, Article ID: 055505. https://doi.org/10.1103/PhysRevLett.98.055505
|
[29]
|
Sun, Z., Zhou, J., Blomqvist, A., Xu, L. and Ahuja, R. (2008) Local Structure of Liquid Ge1Sb2Te4 for Rewritable Data Storage Use. Journal of Physics: Condensed Matter, 20, Article ID: 205102.
https://doi.org/10.1088/0953-8984/20/20/205102
|
[30]
|
Li, X.B., Liu, X.Q., Liu, X., Han, D., Zhang, Z., Han, X.D., et al. (2011) Role of Electronic Excitation in the Amorphization of Ge-Sb-Te Alloys. Physical Review Letters, 107, Article ID: 015501.
https://doi.org/10.1103/PhysRevLett.107.015501
|
[31]
|
Yamada, N. and Matsunaga, T. (2000) Structure of Laser-Crystallized Ge2Sb2+xTe5 Sputtered Thin Films for Use in Optical Memory. Journal of Applied Physics, 88, 7020-7028. https://doi.org/10.1063/1.1314323
|
[32]
|
Nonaka, T., Ohbayashi, G., Toriumi, Y., Mori, Y. and Hashimoto, H. (2000) Crystal Structure of GeTe and Ge2Sb2Te5 Meta-Stable Phase. Thin Solid Films, 370, 258-261. https://doi.org/10.1016/S0040-6090(99)01090-1
|
[33]
|
Pirovano, A., Lacaita, A.L., Benvenuti, A., Pellizzer, F. and Bez, R. (2004) Electronic Switching in Phase-Change Memories. IEEE Transactions on Electron Devices, 51, 452-459. https://doi.org/10.1109/TED.2003.823243
|
[34]
|
Yamada, N., Ohno, E., Nishiuchi, K., Akahira, N. and Takao, M. (1991) Rap-id-Phase Transitions of GeTe-Sb2Te3 Pseudobinary Amorphous Thin Films for an Optical Disk Memory. Journal of Applied Physics, 69, 2849-2856.
https://doi.org/10.1063/1.348620
|
[35]
|
Shamoto, S., Yamada, N., Matsunaga, T., Proffen, T., Richardson, J.W., Chung, J.H., et al. (2005) Large Displacement of Germanium Atoms in Crystalline Ge2Sb2Te5. Applied Physics Letters, 86, Article ID: 081904.
https://doi.org/10.1063/1.1861976
|
[36]
|
Kim, E.T., Lee, J.Y. and Kim, Y.T. (2007) Investigation of the Structural Transformation Behavior of Ge2Sb2Te5 Thin Films Using High Resolution Electron Microscopy. Applied Physics Letters, 91, Article ID: 101909.
https://doi.org/10.1063/1.2783478
|
[37]
|
Njoroge, W.K., Wöltgens, H.-W. and Wuttig, M. (2002) Density Changes upon Crys-tallization of Ge2Sb2.04Te4.74 Films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 20, 230-233.
https://doi.org/10.1116/1.1430249
|
[38]
|
Sun, Z., Zhou, J., Blomqvist, A., Johansson, B. and Ahuja, R. (2009) Formation of Large Voids in the Amorphous Phase-Change Memory Ge2Sb2Te5 Alloy. Physical Review Letters, 102, Article ID: 075504.
https://doi.org/10.1103/PhysRevLett.102.075504
|
[39]
|
Jovari, P., Kaban, I., Kohara, S. and Takata, M. (2010) Comment on “Formation of Large Voids in the Amorphous Phase-Change Memory Ge2Sb2Te5 Alloy”. Physical Review Letters, 104, Article ID: 019601.
|
[40]
|
Siegel, J., Afonso, C.N. and Solis, J. (1999) Dynamics of Ultrafast Reversible Phase Transitions in GeSb Films Trig-gered by Picosecond Laser Pulses. Applied Physics Letters, 75, 3102-3104. https://doi.org/10.1063/1.125244
|
[41]
|
Eising, G., Van Damme, T. and Kooi, B.J. (2014) Unraveling Crystal Growth in GeSb Phase-Change Films in between the Glass-Transition and Melting Temperatures. Crystal Growth & Design, 14, 3392-3397.
https://doi.org/10.1021/cg500347g
|
[42]
|
Solis, J., Afonso, C.N., Hyde, S.C.W., Barry, N.P. and French, P.M.W. (1996) Exist-ence of Electronic Excitation Enhanced Crystallization in GeSb Amorphous Thin Films upon Ultrashort Laser Pulse Irradiation. Physical Review Letters, 76, 2519. https://doi.org/10.1103/PhysRevLett.76.2519
|
[43]
|
Sokolowski-Tinten, K., Solis, J., Bialkowski, J., Siegel, J., Afonso, C.N. and Von der Linde, D. (1998) Dynamics of Ultrafast Phase Changes in Amorphous GeSb Films. Physical Review Letters, 81, 3679.
https://doi.org/10.1103/PhysRevLett.81.3679
|
[44]
|
Callan, J.P., Kim, A.M., Roeser, C.A., Mazur, E., Solis, J., Siegel, J., et al. (2001) Ultrafast Laser-Induced Phase Transitions in Amorphous GeSb Films. Physical Review Letters, 86, 3650-3653.
https://doi.org/10.1103/PhysRevLett.86.3650
|
[45]
|
Shakhvorostov, D., Nistor, R.A., Krusin-Elbaum, L., Martyna, G.J., Newns, D.M., Elmegreen, B.G., et al. (2009) Evidence for Electronic Gap-Driven Metal-Semiconductor Transition in Phase-Change Materials. Proceedings of the National Academy of Sciences of the United States of America, 106, 10907-10911.
https://doi.org/10.1073/pnas.0812942106
|
[46]
|
Zhang, G., Gan, F., Lysenko, S. and Liu, H. (2007) Observation of Ultrafast Carrier Dynamics in Amorphous Ge2Sb2Te5 Films Induced by Femtosecond Laser Pulses. Journal of Applied Physics, 101, Article ID: 033127.
https://doi.org/10.1063/1.2435819
|
[47]
|
Li, X.B., Liu, X.Q., Han, X.D. and Zhang, S.B. (2012) Role of Electronic Excitation in Phase-Change Memory Materials: A Brief Review. Physica Status Solidi (B), 249, 1861-1866. https://doi.org/10.1002/pssb.201200380
|
[48]
|
Hada, M., Oba, W., Kuwahara, M., Katayama, I., Saiki, T., Takeda, J., et al. (2015) Ultrafast Time-Resolved Electron Diffraction Revealing the Nonthermal Dynamics of Near-UV Photoexcitation-Induced Amorphization in Ge2Sb2Te5. Scientific Reports, 5, Article No. 13530. https://doi.org/10.1038/srep13530
|
[49]
|
Mitrofanov, K.V., Fons, P., Makino, K., Terashima, R., Shimada, T., Kolobov, A.V., et al. (2016) Sub-Nanometre Resolution of Atomic Motion during Electronic Excitation in Phase-Change Materials. Scientific Reports, 6, Article No. 20633. https://doi.org/10.1038/srep20633
|
[50]
|
Mendoza-Galvan, A. and Gonzalez-Hernandez, J. (2000) Drude-Like Behavior of Ge:Sb:Te Alloys in the Infrared. Journal of Applied Physics, 87, 760-765. https://doi.org/10.1063/1.371937
|
[51]
|
Senkader, S. and Wright, C.D. (2004) Models for Phase-Change of Ge2Sb2Te5 in Optical and Electrical Memory Devices. Journal of Applied Physics, 95, 504-511. https://doi.org/10.1063/1.1633984
|
[52]
|
左方圆, 阳王, 吴谊群, 赖天树. Ge2Sb2Te5非晶薄膜中超快载流子动力学的飞秒分辨反射光谱研究[J]. 物理学报, 2009, 58(10): 7250-7255.
|
[53]
|
Shu, M.J., Chatzakis, I., Kuo, Y., Zalden, P. and Lindenberg, A.M. (2013) Ultrafast Sub-Threshold Photo-Induced Response in Crystalline and Amorphous GeSbTe Thin Films. Applied Physics Letters, 102, Article ID: 201903.
https://doi.org/10.1063/1.4807731
|
[54]
|
Kolobov, A.V., Fons, P. and Tominaga, J. (2015) Understanding Phase-Change Memory Alloys from a Chemical Perspective. Scientific Reports, 5, Article No. 13698. https://doi.org/10.1038/srep13698
|
[55]
|
Sahu, S., Sharma, R., Adarsh, K.V. and Manivannan, A. (2018) Ultrafast and Low-Power Crystallization in Ge1Sb2Te4 and Ge1Sb4Te7 Thin Films Using Femtosecond Laser Pulses. Applied Optics, 57, 178.
https://doi.org/10.1364/AO.57.000178
|