诱导层成膜对弱外延OTFT的影响
The Influence of the Inducement Layer on WEG OTFT
DOI: 10.12677/APP.2012.24023, PDF, HTML,    科研立项经费支持
作者: 洪 飞*, 谭 莉, 朱棋锋, 向长江, 郭晓东, 申剑锋：上海中科高等研究院新型显示技术研究中心
关键词: 有机薄膜晶体管；弱外延生长；p-6P；酞菁化合物；Organic Thin Film Transistor; Weak Epitaxy Growth; p-6P; Phthalocyanines
摘要: 采用弱外延生长(Weak Epitaxy Growth，WEG)的方法制备OTFTs，研究了不同衬底温度对诱导层p-6P生长形貌的影响，以及WEG-OTFTs器件特性与诱导层形貌的关系。另外，还研究了诱导层p-6P的厚度变化对WEG-OTFTs场效应迁移率的影响。研究发现随着p-6P厚度增加WEG-OTFTs的场效应迁移率是一个先上升后下降然后再上升再下降的过程。我们在诱导层p-6P的厚度2 nm，衬底温度180℃时得到了最大的OTFTs场效应迁移率1.03 cm2/Vs。
Abstract: OTFTs (Organic Thin Film Transistor) were prepared by the method of WEG (Weak Epitaxy Growth). The effection of the growth morphology of p-6P at difference substrate temperature and the relationship between WEG- OTFTs device performance and the morphology of p-6P inducement layer, were investigated. Furthermore, OTFTs device performance depending on the thickness of p-6P inducement layer was disclosed. We found that as the p-6P thickness rose up continuously, the WEG-OTFTs mobility increased at first then decreased, and increased again and then deseased at last. The maximum field effect mobility we obtained was1.03 cm2/Vs at the conditions of p-6P layer thickness of 2 nm and the substrate temperature of 180˚C.
文章引用：洪飞, 谭莉, 朱棋锋, 向长江, 郭晓东, 申剑锋. 诱导层成膜对弱外延OTFT的影响[J]. 应用物理, 2012, 2(4): 140-144. http://dx.doi.org/10.12677/APP.2012.24023

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