摘要:
基于一束高取向排列的SiC纳米线,本文制备了一种新型的紫外光探测器,并测试研究了其光电性能。采用传统化学气相沉积技术,以二茂铁为催化剂,通过聚合物热解的方法制备了长度达数厘米、直径为100~200 nm的SiC纳米线。探测器由导电银浆固定一束高取向排列的SiC纳米线到器件基座两个引脚上形成,其光电性能测试研究表明,器件暗电流很小、并且在254 nm紫外光照射时,其光电流迅速变大;器件反应时间很短而回复时间相对较长。
Abstract: A new type of Ultraviolet Photodetector (UVPDs) based on a bundle of highly aligned SiC nanowires was fabricated and the photo-electric properties of the UVPDs including I-V characteristic and time response et al. were studied in this paper. SiC nanowires were prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a CVD route. The diameter of SiC nanowires varied from 100 to 200 nm while they were some centimeters long. A bundle of nanowires was fixed onto two legs in a custom base by conductive silver paste to form the UVPDs. The electrical measurements of the device show a big increase of current when explored the device to 254 nm UV light, and the rise time of the device is very short, but the fall time is relatively long.