[1]
|
Casady, J.B. and Johnson, R.W. (1993) Status of Silicon Carbide (SiC) as a Wide-Bandgap Semiconductor for High- Temperature Applications: A Review. Solid-State Electronics, 39, 1409-1422.
http://dx.doi.org/10.1016/0038-1101(96)00045-7
|
[2]
|
郝跃, 彭军, 杨银堂. 碳化硅宽带隙半导体技术[M]. 北京: 科学出版社, 2002: 1-14.
|
[3]
|
Sadow, S.E. and Agarwal, A. (2004) Advances in Silicon Carbide Processing and Applications. Artech House, Boston, 1-4.
|
[4]
|
Baliga, B.J. (2005) Silicon Carbide Power Devices. World Scientific, Singapore City, 15-33.
|
[5]
|
Afanas’ev, V.V., Bassler, M., Pensl, G., et al. (1997) Intrinsic SiC/SiO2 Interface States. Physica Status Solidi (A), 162, 321-337. http://dx.doi.org/10.1002/1521-396X(199707)162:1<321::AID-PSSA321>3.0.CO;2-F
|
[6]
|
Dhar, S. (2005) Ni-trogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC. Vanderbilt University, Tennessee.
|
[7]
|
Song, Y., Dhar, S. and Feldman, L.C. (2004) Modified Deal Grove Model for the Thermal Oxidation of Silicon Carbide. Journal of Applied Physics, 95, 4953-4957. http://dx.doi.org/10.1063/1.1690097
|
[8]
|
宋庆文. 4H-SiC功率UMOSFETs的设计与关键技术研究[D]. [博士学位论文]. 西安: 西安电子科技大学, 2012: 51-52.
|
[9]
|
Gerhard, P., Svetlana, B., Thomas, F., et al. (2009) Alternative Techniques to Reduce Interface Traps in n-Type 4H-SiC MOS Capacitors. Physica Status Solidi (A), 245, 1378-1389. http://dx.doi.org/10.1002/pssb.200844011
|
[10]
|
Knaup, J.M., Deák, P., Frauenheim, T., et al. (2005) Theoretical Study of the Mechanism of Dry Oxidation of 4H-SiC. Physical Review B, 71, 235321(1-9).
|
[11]
|
Wang, S., Dhar, S., Wang, S.R., et al. (2007) Bonding at the SiC-SiO2 Interface and the Effects of Nitrogen and Hydrogen. Physical Review Letters, 98, 026101.
|
[12]
|
Devynck, F., Giustino, F. and Pasquarello, A. (2005) Abrupt Model Interface for the 4H(1000)SiC-SiO2 Interface. Microelectronic Engineering, 80, 38-41. http://dx.doi.org/10.1016/j.mee.2005.04.021
|
[13]
|
Devynck, F., Giustino, F., Broqvist, P., et al. (2007) Structural and Electronic Properties of an Abrupt 4H-SiC(0001)/ SiO2 Interface Model: Classical Molecular Dynamics Simulations and Density Functional Calculations. Physical Review B, 76, 075351. http://dx.doi.org/10.1103/PhysRevB.76.075351
|
[14]
|
Devynck, F. and Pasquarello, A. (2007) Semiconductor De-fects at the 4H-SiC(0001)/SiO2 Interface. Physica B-Con- densed Matter, 401, 556-559. http://dx.doi.org/10.1016/j.physb.2007.09.020
|
[15]
|
Li, W., Zhao, J. and Wang, D. (2015) An Amorphous SiO2/4H-SiC(0001) Interface: Band Offsets and Accurate Charge Transition Levels of Typical Defects. Solid State Communications, 205, 28-32.
http://dx.doi.org/10.1016/j.ssc.2014.12.020
|
[16]
|
Li, W., Zhao, J. and Wang, D. (2015) Structural and Electronic Properties of the Transition Layer at the SiO2/4H-SiC Interface. AIP Advances, 5, 017122. http://dx.doi.org/10.1063/1.4906257
|
[17]
|
Jeong, H.C. and Williams, E.D. (1999) Steps on Surfaces: Experiment and Theory. Surface Science Reports, 34, 171- 294. http://dx.doi.org/10.1016/S0167-5729(98)00010-7
|
[18]
|
Nie, S., Lee, C.D., Feenstra, R.M., et al. (2008) Step Formation on Hydrogen-Etched 6H-SiC(0001) Surfaces. Surface Science, 602, 2936-2942. http://dx.doi.org/10.1016/j.susc.2008.07.021
|
[19]
|
Ventra, M.D. and Pantelides, S.T. (1999) Atomic-Scale Mechanisms of Oxygen Precipitation and Thin-Film Oxidation of SiC. Physical Review Letters, 83, 1624-1627. http://dx.doi.org/10.1103/PhysRevLett.83.1624
|
[20]
|
Deák, P., Knaup, J.M., Hornos, T., et al. (2007) The Mechanism of Defect Creation and Passivation at the SiC/SiO2 Interface. Journal of Physics D Applied Physics, 41, 6242-6253.
|
[21]
|
Knaup, J.M., Deák, P., Frauenheim, T., et al. (2005) Defects in SiO2 as the Possible Origin of Near Interface Traps in the SiC/SiO2 System: A Systematic Theoretical Study. Physical Review B, 72, 115323(1-9).
|
[22]
|
Wang S., Ventra M.D., Kim, S.G., et al. (2001) Atomic-Scale Dynamics of the Formation and Dis-solution of Carbon Clusters in SiO2. Physical Review Letters, 86, 5946-5949. http://dx.doi.org/10.1103/PhysRevLett.86.5946
|