氮化镓功率器件驱动特性的研究

Research on Driving Characteristics of GaN Power Devices

摘要: 高效率、高功率密度是现代开关电源的发展趋势，提高开关频率可以有效减小无源器件的尺寸。传统的Si材料的功率器件性能已逐渐到了瓶颈，宽禁带半导体器件中的氮化镓功率器件相对于Si MOSFET，具有更小的导通阻抗，可以承受更高的开关频率条件。本文以GaN System的GS66052B为例，通过双脉冲测试，分析了单体增强型氮化镓功率器件的动态特性，设计了基于LM5114的单管驱动电路，并针对漏源极出现的过高的电压尖峰，通过参数计算，利用RC缓冲回路吸收过冲电压。实验表明氮化镓功率器件在电压尖峰处理后的高频负载下工作性能良好。

Abstract: The development trend of modern switching power supply is high efficiency and high power density. The power device performance of traditional Si material has become the bottleneck, and GaN power devices of wide bandgap semiconductor devices have a smaller turn-on resistance and can withstand higher switching frequency comparing with the Si MOSFET. Taking GS66052B of GaN System for example, this paper analyzed the dynamic characteristics of monomer enhanced GaN power devices through the double pulse test, and designed the LM5114 driving circuit based on single tube, and absorbed the high voltage spikes through parameter calculation with RC snubber circuit. The experimental results show that the GaN power devices have good performance under the high frequency and load.