作者:
S Wang，S Dhar，SR Wang，AC Ahyi，A Franceschetti
关键词:
conducting polymers ；polypyrrole ；benzenesulfonate ；voltammetry ；AFM ；quantum chemical modeling
摘要:
Unlike the Si - SiO 2 interface, the SiC - SiO 2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.
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