作者:
H Tamaso，S Yamada，H Kitabayashi，T Horii
关键词:
4H-SiC ； Auger Electron Spectroscopy ； Contact Resistance ； Depth Profiles ； Ohmic Contact
摘要:
An ohmic contact process by using tri-layer materials for a source contact of a silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) is proposed. The authors validate its extremely low contact resistance for both n-type and p-type SiC by a simple process. The characteristics of Ti/Al/Si ohmic contacts were measured by using the transfer length method (TLM). We examined the dependence of the contact resistance on the thickness of each layer of Ti/Al/Si. Then, it is found that Ti/Al/Si contacts with an appropriate thickness show excellent ohmic properties for both n-type and p-type SiC. N-type specific contact resistance (ρ) of 3.7 × 10Ω cmand p-type specific contact resistance (ρ) of 1.7 × 10Ω cmare obtained with Ti (20 nm) /Al (30 nm) /Si (30 nm).
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