作者:
NA Papanicolaou，A Edwards，MV Rao，WT Anderson
关键词:
Gold；Annealing；Contact resistance；Semiconductor junctions；Metallization
摘要:
In this letter, we report on the investigation of Si/Pt Ohmic contacts to p-type 4H–SiC. The contacts were formed by a vacuum annealing method at 110066°C for 3 min, which resulted in specific contact resistivities in the low 10 614 68Ω66 cm 2 range. Auger analysis has shown that, at this anneal temperature, there was a uniform intermixing of the Si and Pt, migration of Pt into the SiC, and out-diffusion of C into the metallization layers. Overlayers of Au or Ni/Au on Si/Pt had the effect of decreasing the specific contact resistance and improving the surface morphology of the annealed contacts.
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