作者:
T Sakai，K Nitta，S Tsukimoto，M Moriyama，M Murakami
关键词:
Annealing；Semiconductor junctions；Contact resistance；Germanium；Leakage currents
摘要:
Reduction of annealingtemperature to prepare low resistanceohmic contact materials for p-type 4H-SiC was achieved by adding Ge to the conventional TiAl contacts. Although the binary TiAl contact is required to anneal at temperature as high as 1000鈥娐癈 to convert Schottky to ohmic behavior after deposition of the Ti and Al layers on the SiC substrate, the GeTiAl contacts provided the specific contact resistance of about 1脳10 鈭惟鈥cm 2 by annealing at temperature as low as 600鈥娐癈. This low annealingtemperature is desirable to reduce the gate leakage current of the SiC devices. The GeTiAl ohmic contacts were thermally stable during isothermal annealing at 400鈥娐癈 subsequently after preparing the ohmic contacts by annealing at 600鈥娐癈, which is also required by the device packaging process.
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