《Semiconductor Science & Technology》
The Role of Nickel and Titanium in the Formation of Ohmic Contacts on p-Type 4H-SiC
作者:
L Dusoulier，S Denis，M Dirickx，P Vanderbemden，M Ausloos
关键词:
Bibliometrics；Scientometrics；Negative result publication；S&T information；Semantic analysis；Publication bias
摘要:
The formation of low resistivity ohmic contacts to p-type 4H–SiC is achieved. Transfer length method (TLM)-based structures were fabricated on 0.80208m thick epitaxial p-type silicon carbide (4H–SiC) layers. TLM metal patterns were obtained by a lift-off procedure and electron beam deposition of Ni, Ti and Al. The electrical properties of the contacts were examined using current/voltage measurements. Contact resistivity as a function of annealing was investigated over the temperature range from 700 to 100002°C. The lowest contact resistivity of 1.502×021002Ω cm02was obtained for the Ni/Ti/Al/Ni contact after annealing at 80002°C for 9002s. Using secondary ion mass spectrometry, energy-dispersive x-ray spectroscopy and x-ray diffraction measurements, we quantitatively and qualitatively determined the formation and the nature of the ohmic contact to p-type SiC.
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