《Journal of Semiconductors》
Improved Adhesion and Interface Ohmic Contact on n-Type 4H-SiC Substrate by Using Ni/Ti/Ni
作者:
L Han，H Shen，K Liu，Y Wang，Y Tang
关键词:
ohmic contact；SiC；Ni/Ti/Ni；NiSi
摘要:
The Ni/Ti/Ni multilayer ohmic contact properties on a 4H-SiC substrate and improved adhesion with the Ti/Au overlayer have been investigated. The best specific contact resistivity of 3.16×10-5 Ω·cm2 was obtained at 1050 C. Compared with Ni/SiC ohmic contact, the adhesion between Ni/Ti/Ni/SiC and the Ti/Au overlayer was greatly improved and the physical mechanism under this behavior was analyzed by using Raman spectroscopy and X-ray energy dispersive spectroscopy(EDS) measurement. It is shown that a Ti-carbide and Ni-silicide compound exist at the surface and there is no graphitic carbon at the surface of the Ni/Ti/Ni structure by Raman spectroscopy,while a large amount of graphitic carbon appears at the surface of the Ni/SiC structure, which results in its bad adhesion. Moreover, the interface of the Ni/Ti/Ni/SiC is improved compared to the interface of Ni/SiC.
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