作者:
FABRIZIO ROCCAFORTE，FRANCESCO LA VIA，VITO RAINERI
关键词:
摘要:
In this chapter, the most significant results obtained in the last decade in the field of ohmic contacts to SiC are reviewed. First, the basic concepts related to the physics of ohmic contacts and to the contact resistance measurement techniques are briefly reported. Then, some aspects concerning the formation of low resistance (10-5-10-6 惟cm2) ohmic contacts on n-type and for p-type SiC are discussed, focusing on Ni-based and Al/Ti-based contacts. Examples of innovative applications on practical devices are also reported, as the simultaneous formation of ohmic contacts on n- and p-type SiC for vertical power MOS devices, obtained adding Al to a standard Ni contact, and a single-metal technology for ohmic and rectifying contacts in MESFETs, using Ti or Ni without post-deposition annealing.
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