标题:
SiC纳米线紫外光探测器光电性能的研究Fabrication and Properties of Ultraviolet Photo-Detector Based on SiC Nanowires
作者:
于晓燕, 彭刚, 李公义, 何焰蓝, 周应秋
关键字:
紫外光探测器, SiC纳米线, 化学气相沉积法Ultraviolet Photodetector (UVPD); SiC Nanowires; Chemical Vapor Deposition (CVD)
期刊名称:
《Hans Journal of Nanotechnology》, Vol.2 No.2, 2012-05-15
摘要:
基于一束高取向排列的SiC纳米线，本文制备了一种新型的紫外光探测器，并测试研究了其光电性能。采用传统化学气相沉积技术，以二茂铁为催化剂，通过聚合物热解的方法制备了长度达数厘米、直径为100~200 nm的SiC纳米线。探测器由导电银浆固定一束高取向排列的SiC纳米线到器件基座两个引脚上形成，其光电性能测试研究表明，器件暗电流很小、并且在254 nm紫外光照射时，其光电流迅速变大；器件反应时间很短而回复时间相对较长。A new type of Ultraviolet Photodetector (UVPDs) based on a bundle of highly aligned SiC nanowires was fabricated and the photo-electric properties of the UVPDs including I-V characteristic and time response et al. were studied in this paper. SiC nanowires were prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a CVD route. The diameter of SiC nanowires varied from 100 to 200 nm while they were some centimeters long. A bundle of nanowires was fixed onto two legs in a custom base by conductive silver paste to form the UVPDs. The electrical measurements of the device show a big increase of current when explored the device to 254 nm UV light, and the rise time of the device is very short, but the fall time is relatively long.