标题:
基于半导体多量子阱中激子能级的EIT全光开关All-Optical Switching Based on EIT Effects of Semiconductor Multiple Quantum Wells Exciton Levels
作者:
杜鸣笛, 严伟
关键字:
半导体多量子阱, 电磁诱导透明, 全光开关Semiconductor Multiple Quantum Wells; EIT; All-Optical Switching
期刊名称:
《Optoelectronics》, Vol.3 No.3, 2013-09-12
摘要:
我们报道了一种全新的全光开关，该光开关是在半导体多量子阱中基于激子和双激子能级形成的EIT效应，利用量子相干相消效应来减小材料对探测光场的吸收，且探测光场吸收的强度可以通过控制光场来调节。若将控制光场设置为脉冲光场，则可以实现探测光场的开关调制，通过选取适当的控制光场的强度，可以得到约86%的开关效率。
We report a new all-optical switching. The all-optical switching is based on EIT effect of semiconductor multiple quantum wells exciton energy levels, the use of quantum coherence effects can reduce the absorption of the probe light field, and the intensity of the absorption for the probe light field can be adjusted by the control light field. If the control light field is pulse light field, the all-optical switching can be performed. We can select the appropriate intensity of control light field; the efficiency of switching can reach at almost 86%.