Mobile version of Hanspub

文章引用说明 更多>> (返回到该文章)

Mak, K.F., Lee, C.G., Hone, J., Shan, J. and Heinz, T.F. (2010) Atomically thin MoS2: A new direct-gap semiconductor. Physical Review Letters, 105, Article ID: 136805.

被以下文章引用: