标题:
氧气通量对反应溅射法制备HfO2薄膜生长过程的影响Effect of O2 Flux on the Growth Process of HfO2 Thin Films Deposited by Reactive Sputtering
作者:
杨宇桐, 唐武
关键字:
HfO2薄膜, 射频磁控反应溅射, XPS, AFM HfO2 Film; RF Magnetron Reactive Sputtering; XPS; AFM
期刊名称:
《Advances in Condensed Matter Physics》, Vol.2 No.1, 2013-02-17
摘要:
利用金属Hf与氧气反应溅射制备了HfO2薄膜，采用X射线光电子能谱分析(XPS)、原子力显微镜(AFM)等手段对薄膜的组成成分以及表面形貌进行了分析表征，并从薄膜生长机理角度研究了氧气的通量对于HfO2成膜过程的影响，得到了氧气通量的增大能使HfO2薄膜的化学配比、非晶结构和表面形貌得到优化的结论。
HfO2 thin films are deposited by reactive sputtering under atmospheres composited by various ratios of oxygen and argon. The chemical composition of the HfO2 thin films is tested by X-ray photoelectron spectroscopy (XPS). The surface morphology of the HfO2 thin films is characterized by atomic force microscopy (AFM). Effect of various O2 flux on the chemical composition, structure, and surface morphology in the growth process of HfO2 thin films is studied in the view of thin film growth mechanism. And results show that improving O2 flow rate can optimize the stoichiometric, amorphous structure and surface morphology of HfO2 films.