标题:
Mn掺杂ZnO薄膜的Raman散射特性Raman Properties of Mn-Doped ZnO Thin Films
作者:
李彤, 介琼, 张宇, 王雅欣, 倪晓昌, 赵新为
关键字:
ZnO, Mn, 拉曼, 稀磁半导体 ZnO; Mn; Raman; Diluted Magnetic Semiconductors
期刊名称:
《Advances in Condensed Matter Physics》, Vol.2 No.1, 2013-02-17
摘要:
利用射频磁控溅射方法在玻璃衬底上室温沉积了一系列ZnO和ZnO:Mn薄膜。结合Raman光谱和X射线衍射谱分析了不同Ar流量条件下的ZnO和ZnO:Mn薄膜的结构特性。结果显示，未掺杂的ZnO薄膜呈现出显著的(002)定向生长特征，出现在437 cm−1的Raman散射峰进一步证实了这一点。将Mn掺杂进入ZnO薄膜后，在522 cm−1位置上显现出很强的Raman散射峰，这可能是与Mn掺杂后的晶格缺陷有关。随着Ar流量的增大，522 cm−1和A1(LO)模Raman散射峰均出现的红移趋势，可能是ZnO薄膜在引入Mn时导致的更多晶格缺陷所致。
ZnO and ZnO:Mn thin films were prepared on glass substrates at room temperature under the different Ar flow using RF magnetron sputtering method. Raman spectroscopy and X-ray diffraction spectra were used to analyze the structural characteristics of ZnO and ZnO:Mn thin films. The results show that the (002) orientation peak in ZnO thin film indicates ZnO has the significant wurtzite structure, which is also evidenced by the clear Raman peak at 437 cm−1. The appearance of Raman peak at522 cm−1 is explained by the lattice defects when Mn elements were doped in ZnO films. After increasing the Ar flow, the redshift of Raman peaks at522 cm−1 and A1(LO) mode may be caused by much more lattice defects when introducing Mn elements into ZnO thin films.