现代物理  >> Vol. 3 No. 3 (July 2013)

ZnO/MgO(011)的异质外延与特性
Epitaxial Growth and Properties of ZnO/MgO(011)

DOI: 10.12677/MP.2013.33015, PDF, HTML, 下载: 3,401  浏览: 11,571  国家自然科学基金支持

作者: 耿 伟, 王惠琼*, 周华, 杜达敏, 杨闻操, 陈嘉琪, 陈晓航, 詹华瀚, 康俊勇:厦门大学物理系福建省半导体材料及应用重点实验室,厦门

关键词: 氧化镁氧化锌AFMSEMXPSMagnesium Oxide; Zinc Oxide; AFM; SEM; XPS

摘要: 本文着重研究ZnO薄膜在MgO(011)衬底上的生长行为。利用分子束外延法(MBE)在MgO(110)衬底上生长ZnO薄膜,通过原子力显微镜(AFM)和扫描电子显微镜(SEM)表征了其表面形貌,利用X射线光电子能谱学(XPS)对薄膜的组分进行深度分层剥析,并采用透射谱(XL)研究了其光学性质。结果显示,薄膜以三维模式生长,而且薄膜表面平整度受到衬底温度的影响;而所生长的薄膜均显示了ZnO透射谱的特征峰,特征峰的位置几乎不受衬底温度的影响。不同生长时间段的薄膜结构的演变过程也通过原位的反射高能电子衍射(RHEED)和原子力显微镜进行了考察。XPS分层组分分析发现,在ZnO薄膜生长过程中,Zn离子会扩散到MgO(110)衬底之中。
Abstract: In this work, the growth behaviors of ZnO thin films on MgO (011) substrates were studied. ZnO films were deposited on MgO(110) substrates using oxygen plasma-assisted molecular beam epitaxy (MBE). Their surface mor- phologies were probed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Elemental con- stituents at different depths were also analyzed by X-ray photoelectron spectroscopy (XPS) and the optical properties of the ZnO films were characterized by transmission spectra. The film growth was found to follow a three-dimensional growth mode and the surface morphologies could be monitored by substrate temperature. The characteristic band gap of ZnO was found for all the films and the value was little influenced by the substrate temperature. In addition, the evolu- tion of the structure was examined by capturing in situ reflection high-energy electron diffraction (RHEED) patterns and ex situ AFM for different growth steps. During the growth of ZnO films, the Zn ions were found to diffuse into the MgO(110) substrate.

文章引用: 耿伟, 王惠琼, 周华, 杜达敏, 杨闻操, 陈嘉琪, 陈晓航, 詹华瀚, 康俊勇. ZnO/MgO(011)的异质外延与特性[J]. 现代物理, 2013, 3(3): 79-83. http://dx.doi.org/10.12677/MP.2013.33015

参考文献

[1] S. Shionoya, W. M. Yen and H. Yamamoto. Phosphor handbook. Boca Raton: Taylor & Francis, 1999.
[2] C. Xu, X. Sun. Field emission from one-dimensional nanostruc- tured zinc oxide. International Jour-nal of Nanotechnology, 2004, 1(4): 452-463.
[3] M. W. Shin, R. J. Trew. GaN MESFETs for high-power and hi- gh-temperature micro-wave applications. Electronics Letters, 1995, 31(6): 498-500.
[4] F. Hamdani, A. E. Botchkarev, H. Tang, W. Kim and H. Morkoç. Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO. Applied Physics Letters, 1997, 71(21): 3111-3113.
[5] 冯怡, 袁忠勇. ZnO纳米结构制备及其器件研究[J]. 中国科技论文在线, 2009, 4(3): 157-168.
[6] H. Zhou, H.-Q. Wang, L. J. Wu, L. H. Zhang, K. Kisslinger, Y. M. Zhu, X. H. Chen, H. H. Zhan and J. Y. Kang. Wurtzite ZnO(001) films grown on cubic MgO(001) with bulk-like opto-electronic properties. Applied Physics Letters, 2011, 99(14): 141917 (1-3).
[7] H. Zhou, H.-Q. Wang, X.-X. Liao, Y. F. Zhang, J.-C. Zheng, J.-O. Wang, E. Muhemmed, H.-J. Qian, K. Ibra-him, X. H. Chen, H. H. Zhan and J. Y. Kang. Tailoring of polar and nonpolar ZnO planes on MgO(001) substrates through molecular beam epitaxy. Na- noscale Research Letters, 2012, 7 (1):184.
[8] R. F. C. Farrow, D. Weller, R. F. Marks, M. F. Toney, D. J. Smith and M. R. McCartney. Magnetic anisotropy and microstructure in molecular beam epitaxial FePt(110)/MgO(110). Journal of Applied Physics, 1998, 84(2): 934-939.
[9] B. Warota, E Snoecka, J. C. Ousseta, M. J. Casanovea, S. Dubourgb and J. F. Bobob. Surface morphology of NiO layers on MgO(001), MgO(110) and MgO(111). Applied Surface Sci-ence, 2002, 188: 151-155.
[10] M. Ohtake, Y. Nukaga, Y. Sato, F. Kirino and M. Futamoto. Epitaxial growth of fcc-CoXNi100−X thin films on MgO(110) sin- gle-crystal substrates. Journal of Applied Physics, 2009, 106(12): 123921.
[11] 吴自勤. 薄膜生长[M]. 北京: 科学出版社, 2001.
[12] A. Setiawan, T. Yao. ZnO layers grown by plasma-assisted MBE. Germany: VDM Verlag Dr. Müller AG & Co. KG, 2011.
[13] 刘永利, 刘欢, 李蔚, 赵骞, 祁阳. 衬底温度对ZnO薄膜生长过程和微结构的影响[J]. 物理化学报, 2013, 29(3): 631-638.
[14] S. A. Chambers, Epitaxial growth and properties of thin film oxides. Surface Science Reports, 2000, 39: 105.