基本情况
余学功,浙江大学副教授、博士生导师、求是青年学者,国家优秀青年基金获得者。1999年浙江大学本科毕业,2004年浙江大学博士毕业,博士毕业论文获得全国百篇优秀博士论文提名奖;2002年10月至2003年9月在日本信州大学(Shinshu University, Nagano)教育学部做访问学者;2004年10月至2007年10月在德国勃兰登堡工业大学(University of
Brandenburg Technology, Cottbus)物理系从事博士后研究工作。2007年11月至2009年2月在美国北卡州立大学(North
Carolina State University,Raleigh)从事助理研究员工作。2009年2月至今在浙江大学材料科学与工程学系任教。现为13个国际刊物的审稿人、国家自然科学基金通讯评议人。在Mater. Sci.
Eng.: R、ACS Nano、Nano Energy、J. Mater. Chem. A、Sol. Energ. Mater. Sol. Cells、Appl. Phys. Lett.等国际重要杂志上发表SCI论文100多篇;受邀在国际学术会议上做邀请报告5次,国内学术会议上做邀请报告7次;获国家授权发明专利28项,多项专利技术获得产业化应用。
研究领域
主要开展晶体硅材料及相关电池工艺的研究
荣誉奖励
-
曾获得国家自然科学二等奖1项(第四完成人)
-
省科学技术一等奖2项(第四完成人)
-
省科学技术二等奖1项(第三完成人)
科研项目
作为负责人先后主持了国家自然科学基金3项、国家科技支撑计划1项及其他省部项目7项;同时作为学术骨干参加国家02科技重大专项1项和国家自然科学基金重点项目1项。
论文发表
-
Xuegong Yu, Peng Wang, Peng Chen, Xiaoqiang
Li, and Deren Yang, Suppression of boron–oxygen defects in p-type Czochralski
silicon by germanium doping, Applied Physics Letters 97 (2010) 051903-1-3
-
Xuegong Yu, Lihui Song, Deren Yang,Martin
Kittler, and George A. Rozgonyi,Modulation of 1.5 mm dislocation-related
luminescence emitted from a direct silicon bonded interface by external bias,
Applied Physics Letters 96 (2010) 211120-1-3
-
Xiaoqiang Li, Xuegong Yu, Lihui Song, Deren
Yang, and George Rozgonyi, Effect of nickel contamination on grain boundary
states at a direct silicon bonded (110)/(100) interface, Scripta Materialia 63
(2010) 1100–1103
-
X. Yu, X. Li, R. Fan, D. Yang, M. Kittler,
M. Reiche, M. Seibt, and G. Rozgonyi, Effect of Au contamination on the
electrical characteristics of a “model” small-angle grain boundary in n-type
direct silicon bonded wafer, Journal of Applied Physics 108 (2010) 053719 -1-6
-
Xiaoqiang Li, Deren Yang, Xuegong Yu,
Duanlin Que, Phosphorus gettering of precipitated Cu in single crystalline
siliconbased on rapid thermal process, Journal of Crystal Growth 312 (2010)
3069–3074
-
Xiaoqiang Li, Xuegong Yu, Dong Lei, Deren
Yang, and George Rozgonyi,Effect of iron contamination on grain boundary states
at a direct silicon bonded (110)/(100) interface, P hys. Status Solidi-RRL 4
(2010) 350–352
-
X. Yu, J. Lu, G. Rozgonyi, Capacitance
transient and current-/capacitance-voltage study of direct silicon bonded
(110)/(100) interface, Appl. Phys. Lett. 92 (2008) 262102-1-3
-
X. Yu, W. Seifert, O. Vyvenko and M.
Kittler, Minority carrier conductive channel formed at a direct silicon-bonded
interfacial grain boundary, Scripta materialia 61 (2009) 828-831
-
X. Yu, J. Lu, K. Youssef and G. Rozgonyi,
Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by
direct silicon bonding, Applied Physics Letters 94, (2009) 221909-1-3
-
X. Yu, J. Lu, G. Rozgonyi, Deep-level
transient spectroscopy study on direct silicon bonded (110)/(100) interfacial
grain boundary, Semicon. Sci. Tech. 23 (2008) 125005-1-5
-
X. Yu, W. Seifert, O. F. Vyvenko, M.
Kittler, T. Wilhelm, M. Reiche, A pure 1.5 um Electroluminescence
from metal-oxide-silicon tunneling diode using dislocation network, Appl. Phys.
Lett. 93, (2008) 041108-1-3
-
X. Yu, J. Lu, G. Rozgonyi, Impact of Cu
contamination on the electrical properties of a direct silicon bonded
(110)/(100) interfacial grain boundary, J. Appl. Phys. 104, (2008) 113702-1-8
-
W. Wang, D. Yang, X. Yu, X. Ma, D. Que,
Effect of point defects on copper-related deep levels in p-type Czochralski
silicon, J. Appl. Phys. 102 (2007) 073521-1-4
-
X. Yu, O. Vyvenko, M. Kittler, W. Seifert,
T. Mtchedlidze, T. Arguirov, M. Reiche, Combined CL/EBIC/DLTS investigation of
a regular dislocation network formed by Si wafer direct bonding, Semiconductor,
41 (2007) 458-461.
-
X. Yu, M. Kittler, O. F. Vyvenko, W.
Seifert, T. Arguirov, M. Reiche, Lumine -scence of dislocation network in
bonded silicon, physica status solidi (c), 4 (2007) 3025-3029
-
M. Kittler, X. Yu, T. Arguirov, W. Seifert,
M. Seibt, M. Reich, T. Wilhem, M. Seibt, O. Voss, A. Wolff, W. Fritzsche,
Regular Dislocation Networks in Silicon as a Tool for Nanostructure Devices
used in Optics, Biology, and Electronics, SMALL, 3 (2007) pp 964-973
-
X. Yu, O.F. Vyvenko, M. Reiche, M. Kittler,
Enhancement of IR emission from a dislocation network in Si due to an external
bias voltage, Material Science and Technology C, 27 (2007) 1026-1029
-
X. Yu, T. Arguirov, M. Kittler, W.
Seifert, M. Ratzke and M. Reiche, Properties of dislocation networks formed by
Si wafer direct bonding, Materials Science in Semiconductor Processing 9 (2006)
96-101
-
Xuegong Yu, Xiangyang Ma, Chunlong Li,
Jiansong Yang and Deren Yang, Grown-in defects in heavily boron-doped
Czochralski silicon wafers, Jpn. J. Appl. Phys., 43 (2004) 4082-4087
-
Hongjie Wang, Deren Yang, Xuegong Yu,
Xiangyang Ma, Daxi Tian, Duanlin Que, Effect of oxygen precipitates and induced
dislocations on oxidationinduced stacking faults in nitrogen-doped Czochralski
silicon, J. Appl. Phys., 96 (2004)3031-3033
-
Hong Li, Deren Yang, Xuegong Yu, and
Duanlin Que, Germanium effect on oxygen precipitation in Czochralski silicon,
J. Appl. Phys., 96 (2004) 4146-4165
-
Xuegong Yu, Deren Yang, Xiangyang Ma, Yejun
Shen, Daxi Tian, Duanlin Que, Oxidation-induced stacking faults and
related grown-in oxygen precipitates in nitrogen-doped Czochralski silicon,
Semicond. Sci. Technol., 18 (2003) 393-397
-
Xuegong Yu, Deren Yang, Xiangyang Ma, Liben
Li and Duanlin Que, Hydrogen annealing of grown-in voids in nitrogen-doped
Czochralski grown silicon, Semicond. Sci. Technol., 18 (2003) 399-403
-
Xuegong Yu, Deren Yang, Xiangyang Ma,
Ruixin Fan and Duanlin Que, Bipolar Structure in Thermally Treated Czochralski
Silicon Wafer, Jpn. J. Appl. Phys., 42 (2003) 1129-1132
-
Xuegong Yu, Toshinori Taishi, Xinming
Huang, Deren Yang and Keigo Hoshikawa, Dislocation Formation in Czochralski Si
Crystal Growth Using an Annealed Heavily B-Doped Si Seed, Jpn. J. Appl. Phys.,
42 (2003) L1299-1301
-
Xuegong Yu, Deren Yang , Xiangyang Ma,
Duanlin Que, Effect of rapid thermal process on oxygen precipitation and
denuded zone in nitrogen-doped silicon wafers, Microelectronic Engineering, 69
(2003) 97-104
-
Xuegong Yu, Deren Yang , Xiangyang Ma, Jin
Xu, Liben Li, Duanlin Que, Effect of oxygen precipitation on voids in bulk
silicon, Microelectronic Engineering, 66 (2003) 289-296
-
Xuegong Yu, Deren Yang, Ruixin Fan,
Xiangyang Ma and Duanlin Que, Bipolar structure of carrier concentration in
hydrogen pre-annealing Czochralski Silicon wafer, Physica B, 340-342 (2003)
601-604
-
Xuegong Yu, Deren Yang, Xiangyang Ma,
Jiansong Yang, Duanlin Que, Grown-in defects in nitrogen-doped Czochralski
silicon, Journal of Applied Physics, 92 (2002) 188-194