外延生长的菱方相Hf0.5Zr0.5O2薄膜的铁电性
Ferroelectric Properties of Rhombohedral in Epitaxically Grown Hf0.5Zr0.5O2 Films
DOI: 10.12677/APP.2022.121001, PDF,  被引量   
作者: 祝 祺*：南京航空航天大学理学院，江苏 南京；杨 浩：南京航空航天大学空天信息材料与物理工信部重点实验室，江苏 南京
关键词: Hf0.5Zr0.5O2薄膜；外延薄膜；铁电性；超薄铁电薄膜；Hf0.5Zr0.5O2 Film； Epitaxial Thin Film； Ferroelectricity； Ultra-Thin Ferroelectric Film
摘要: 本文采用脉冲激光沉积技术，在SrTiO3 (001)衬底上，以La0.7Sr0.3MnO3薄膜为缓冲层和底电极，成功制备了沿(111)取向外延生长的Hf0.5Zr0.5O2 (HZO)薄膜。X射线衍射的结果表明，外延HZO薄膜中菱方相的比例随薄膜生长温度升高而增加，随薄膜厚度的增加而减小。原子力显微镜的结果表明，外延HZO薄膜表面平整，均方根粗糙度为0.228 nm。压电力显微镜的结果证明外延HZO薄膜在室温下表现出良好的铁电性，同时确定了其室温压电系数d33约为4.8 pm/V。这些实验结果为基于HZO薄膜电子器件的设计提供了重要实验依据。
Abstract: In this work, ferroelectric rhombohedral Hf0.5Zr0.5O2 (HZO) thin films with (111)-orientation were epitaxially grown on La0.7Sr0.3MnO3-buffered SrTiO3 (001) substrates by pulsed laser deposition. X-ray diffraction (XRD) scans show that the ratio of rhombohedral phase increases with the increase of thin film growth temperature, and decreases with the increase of thin film thickness. Atomic force microscopy (AFM) image shows that the HZO thin film is very smooth and its root mean square roughness is 0.228 nm. Piezoresponse Force Microscopy (PFM) measurements demonstrate that the HZO thin film shows superior ferroelectricity at room temperature. Meanwhile, the piezoelectric coefficient d33 of HZO thin film is estimated to be around 4.8 pm/V. Our work provides an important experimental result for designing nano-electronic devices based on HZO thin films.
文章引用：祝祺, 杨浩. 外延生长的菱方相Hf0.5Zr0.5O2薄膜的铁电性[J]. 应用物理, 2022, 12(1): 1-7. https://doi.org/10.12677/APP.2022.121001

参考文献

[1] Park, M.H., Lee, Y.H., Mikolajick, T., Schroeder, U. and Hwang, C.S. (2018) Review and Perspective on Ferroelectric HfO2-Based Thin Films for Memory Applications. MRS Communications, 8, 795-808. [Google Scholar] [CrossRef] 
[2] Troiler-McKinstry, S. (2020) Impact of Ferroelectricity. American Ceramic Society Bulletin, 99, 22-23.
[3] Yoong, H.Y., Wu, H., Zhao, J., Wang, H., Guo, R., Xiao, J., et al. (2018) Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and Their Implementations in Memristors for Brain-Inspired Computing. Advanced Functional Materials, 28, Article ID: 1806037. [Google Scholar] [CrossRef] 
[4] Lowther, J.E., Dewhurst, J.K., Leger, J.M. and Haines, J. (1999) Relative Stability of ZrO2 and HfO2 Structural Phases. Physical Review B, 60, 83077-14488. [Google Scholar] [CrossRef] 
[5] Bscke, T.S., Miiller, J., Brauhaus, D., Schröder, U. and Böttger, U. (2011) Ferroelectricity in Hafnium Oxide Thin Films. American Institute of Physics, 99, Article ID: 102903. [Google Scholar] [CrossRef] 
[6] Robertson, J. (2006) High Dielectric Constant Gate Oxides for Metal Oxide Si Transistors. Reports on Progress in Physics, 69, 327-396. [Google Scholar] [CrossRef] 
[7] Müller, J., Böscke, T.S., Müller, S., Yurchuk, E., Polakowski, P., Paul, J., et al. (2013) Ferroelectric Hafnium Oxide: A CMOS-Compatible and Highly Scalable Approach to Future Ferroelectric Memories. 2013 IEEE International Electron Devices Meeting, Washington DC, 9-11 December 2013, 10.8.1-10.8.4. [Google Scholar] [CrossRef] 
[8] Kim, S.J., Mohan, J., Summerfelt, S.R. and Kim, J. (2019) Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances. JOM, 71, 246-255. [Google Scholar] [CrossRef] 
[9] Johnson, B. and Jones, J.L. (2019) Structures, Phase Equilibria, and Properties of HfO2. In: Schroeder, U., Hwang, C. and Funakubo, H., Eds., Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, Woodhead Publishing, Sawston, 25-45. [Google Scholar] [CrossRef] 
[10] Min, H., Schenk, T, and Schroeder, U. (2019) Dopants in Atomic Layer Deposited HfO2 Thin Films. In: Schroeder, U., Hwang, C. and Funakubo, H., Eds., Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, Woodhead Publishing, Sawston, 49-74. [Google Scholar] [CrossRef] 
[11] MüLler, J., BöScke, T.S., SchröDer, U., Mueller, S., Bräuhaus, D., Böttger, U., et al. (2012) Ferroelectricity in Simple Binary ZrO2 and HfO2. Nano Letters, 12, 4318-4323. [Google Scholar] [CrossRef] [PubMed]
[12] Cheema, S.S., Kwon, D., Shanker, N., dos Reis, R., Hsu, S.-L., Xiao, J., et al. (2020) Enhanced Ferroelectricity in Ultrathin Films Grown Directly on Silicon. Nature, 580, 478-482. [Google Scholar] [CrossRef] [PubMed]
[13] Mikolajick, T., Slesazeck, S., Park, M.H. and Schroeder, U. (2018) Ferroelectric Hafnium Oxide for Ferroelectric Random-Access Memories and Ferroelectric Field-Effect Transistors. MRS Bulletin, 43, 340-346. [Google Scholar] [CrossRef] 
[14] Batra, R., Huan, T.D., Jones, J.L., Rossetti Jr., G. and Ramprasad, R. (2017) Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study. Journal of Physical Chemistry C, 121, 4139-4145. [Google Scholar] [CrossRef] 
[15] Kisi, E.H. (2010) Influence of Hydrostatic Pressure on the t→o Transformation in Mg-PSZ Studied by in Situ Neutron Diffraction. Journal of the American Ceramic Society, 81, 741-745. [Google Scholar] [CrossRef] 
[16] Howard, C.J., Kisi, E.H., Roberts, R.B. and Hill, R.J. (1990) Neutron Diffraction Studies of Phase Transformations between Tetragonal and Orthorhombic Zirconia in Magnesia-Partially-Stabilized Zirconia. Journal of the American Ceramic Society, 73, 2828-2833. [Google Scholar] [CrossRef] 
[17] Fina, I, and Sanchez, F. (2021) Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices. ACS Applied Electronic Materials, 3, 1530-1549. [Google Scholar] [CrossRef] 
[18] Shimizu, T., Katayama, K., Kiguchi, T., Akama, A., Konno, T.J. and Funakubo, H. (2015) Growth of Epitaxial Orthorhombic yo1.5-Substituted HfO2 Thin Film. Applied Physics Letters, 23, Article ID: 102903. [Google Scholar] [CrossRef] 
[19] Park, M.H., Kim, H.J., Kim, Y.J., Lee, W., Moon T. and Hwang, C.S. (2013) Evolution of Phases and Ferroelectric Properties of Thin Hf0.5Zr0.5O2 Films According to the Thickness and Annealing Temperature. Applied Physics Letters, 102, Article ID: 242905. [Google Scholar] [CrossRef] 
[20] Wei, Y., Nukala, P., Salverda, M., Matzen, S., Zhao, H.J., Momand, J., et al. (2018) A Rhombohedral Ferroelectric Phase in Epitaxially Strained Hf0.5Zr0.5O2 Thin Films. Nature Materials, 17, 1095-1100. [Google Scholar] [CrossRef] [PubMed]
[21] Lyu, J., Fina, I., Solanas, R., Fontcuberta, J. and Sánchez, F. (2019) Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films. ACS Applied Electronic Materials, 1, 220-228. [Google Scholar] [CrossRef] 

为你推荐