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Qi, J.J., Zhang, Y., Huang, Y.H., Liao, Q.L. and Liu, J. (2006) Doping and defects in the formation of single-crystal ZnO nanodisks. Applied Physics Letters, 89, Article ID: 252115.

被以下文章引用:

• 标题: 化学气相沉积法制备氧化锌纳米结构的研究进展Research Progress on ZnO Nanostructures by CVD

  作者: 宋欢欢, 王轩, 宋礼, 陈露, 张永平

  关键字: ZnO, CVD, 纳米结构, 压电器件ZnO, Chemical Vapor Deposition, Nanostructures, Piezoelectric Device

  期刊名称: 《Advances in Material Chemistry》, Vol.3 No.2, 2015-05-28

  摘要: 纳米结构氧化锌作为一种新型的半导体材料，在光电和压电器件方面具有广阔的应用前景。本文针对化学气相沉积的工艺方法，评述了不同的氧化锌纳米结构的相关制备方法，结构形貌及其独特性能，力求详细地概述氧化锌纳米结构研究的最新进展。针对氧化锌纳米结构的研究现状以及存在问题，展望了未来ZnO纳米材料的研究趋势。Nanostructured ZnO, as a new type of semiconductor material, has found extensively application in optoelectronic and piezoelectric devices. This paper reviews the different preparation techniques of ZnO nanostructures using the chemical vapor deposition methods, its corresponding morphologies, and its unique properties. We endeavor to summary the recent research progress on the ZnO nanostructures. Finally, we also prospect the future development trends about the investigation of ZnO nanostructures.