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D. A. B. Miller, D. S. Chemla, T. C. Damen, et al. Electric field dependence of optical absorption near the band gap of quantum- well structures. Physical Review B, 1985, 32(2): 1043-1060.

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  • 标题: 外场中多势垒结构的电导的计算Calculation of Conductance for Multi-Barrier Structure in a Constant Electric Field

    作者: 骆敏, 杨双波

    关键字: 多势垒结构, 电导Multi-Barrier Structure; Conductance

    期刊名称: 《Applied Physics》, Vol.2 No.2, 2012-04-23

    摘要: 本文对外电场中一维多势垒结构推导了电流密度表达式,进而得出单位面积的电导。在半导体材料(GaAs/GaxAl1–xAs)的参数范围内,通过数值计算进一步研究了一维多势垒结构的单位面积电导与电压特性曲线及温度和势垒宽度对电导–电压曲线的影响。 In this paper, the current density expression and the unit area conductance for one-dimensional multi-barrier structure in the presence of a constant electric field were derived. For a selected range of parameters of semiconductor materials (GaAs/GaxAl1–xAs), through the numerical calculation the characteristics of unit area conductance versus the applied voltage to the structure was studied. This paper also studied how the characteristics of the conductance-voltage changes with the temperature and the width of the barrier.

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