标题:
高温高压碳化硅功率器件封装技术研究Research of Packaging Technology on SiC Power Devices under High Temperature and High Voltage
作者:
赵妙, 许恒宇, 杨谦, 吴昊, 杨霏, 杨成樾, 丁武昌, 金智, 刘新宇
关键字:
碳化硅, 封装, 高温高压, 声学扫描Silicon Carbide, Packaging, High Temperature and High Voltage, Acoustic Scan
期刊名称:
《Smart Grid》, Vol.4 No.6, 2014-12-26
摘要:
碳化硅电力电子器件在高温、高压环境下的应用需求,对封装技术提出更高的要求。本文从封装方式、封装基本材料、贴片材料和键合材料选择几个方面,介绍适用于碳化硅电力电子器件的封装方式。同时给出封装后器件的电学性能和声学扫描的结果。
The application of SiC power electronic devices under high-temperature and high-voltage conditions requires a higher packaging technology. The paper will introduce the suitable packaging method for the silicon carbide power electronics from aspects of the mode, the basic material, the patch material and bonding material selection. At the same time, the paper will give electrical characteristics and acoustic scan results of the packaging devices.