基本情况

王晓亮，博士，研究员，博士生导师；现任中国科学院半导体研究所所长助理，半导体能源研究发展中心副主任，中科院半导体研究所第八届学术委员会委员；中科院研究生院教授；西安交通大学腾飞教授；中国电子学会理事；中国电子学会半导体与集成技术分会秘书长；西安交通大学-中科院半导体所信息功能材料与器件联合实验室副主任、学术委员会委员；中国电子科技集团公司“砷化镓微波毫米波单片和模块电路国防科技重点实验室”学术委员会委员；“电子物理与器件教育部重点实验室”学术委员会委员。

研究领域

Ⅲ-Ⅴ族化合物半导体微电子、光电子材料和器件研发

主要科研

在宽禁带信息功能材料与器件领域形成了系统的自主知识产权，取得了有较大影响的关键技术突破，取得了一批具有国内领先水平、国际先进水平的突出研究成果，一些成果达到国际领先水平，有力支撑了新一代电子元器件和电路在我国的发展。

荣誉奖励

2006年获中科院预研先进个人荣誉称号

2009年荣获工信部科学技术成果一等奖

论文发表

九十年代至今在国内外主要学术刊物上发表研究论文一百二十余篇，其中已获得授权国家发明专利21项，培养并取得博士学位的研究生18名。

1. Jieqin Ding, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Hong Chen. A 2nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures. Applied Physics Letters,101,182102 (2012)
2. Yang Bi, Xiaoliang Wang, Cuimei Wang, Jianping Li, Hongxin Liu, Hong Chen, Hongling Xiao, Chun Feng and Lijuan Jiang. The influence of pressure on the growth of InAlN/AlN/GaN heterostructure. Eur.Phys.J.Appl.Phys. 57,30103 (2012)
3. Lijuan Jiang, Xiaoliang Wang, Hongling Xiao, Zhanguo Wang, Cuibai Yang, Minglan Zhang. Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions. Applied Physics A,104,429-432 (2011)
4. Qingwen Deng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Qifeng Hou, Defeng Lin, Jinmin Li, Zhanguo Wang and Xun Hou. An investigation on InxGa1−xN/GaN multiple quantum well solar cells. Journal of Physics D: Applied Physics, 44, 265103 (2011)
5. Qingwen Deng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Defeng Lin, Lijuan Jiang, Chun Feng, Jinmin Li, Zhanguo Wang, Xun Hou. Comparison of as grown and annealed GaN/InGaN:Mg Samples. Journal of Physics D: Applied Physics 44,345101 (2011)
6. Xu Pan, Xiaoliang Wang, Meng Wei, Cuibai Yang, Hongling Xiao, Cuimei Wang. Growth of GaN film on Si (111) substrate by using AlN sandwich structure as buffer. Journal of Crystal Growth, 318, 464 (2011)
7. Xu Pan, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Chun Feng, Lijuan Jiang, Haibo Yin, Hong Chen. Surface characterization of AlGaN grown on Si (111) substrates. Journal of Crystal Growth, 311 ,29 (2011)
8. Qifeng Hou, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Cuibai Yang, Haibo Yin, Qingwen Deng, Jinmin Li, Zhanguo Wang, and Xun Hou. Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN. Applied Physics Letters,98,10,102104 (2011)
9. Xiaoliang Wang, Tangsheng Chen, Hongling Xiao, Jian Tang, Junxue Ran, Minglan Zhang, Chun Feng, Qifeng Hou, Lijuan Jiang, Jinmin Li, Zhanguo Wang. An Internally-matched GaN HEMTs Device with 45.2 W at 8 GHz for X band application. Solid State Electronics, 53 ,332-335(2009)
10. Wang Xiaoliang, Chen Tangsheng, Xiao Hongling, Wang Cuimei, Hu Guoxin, Luo Wweijun, Tang Jian, Guo Lunchun, Li Jinmin. High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz. Solid-State Electronics, 52 (6), 926-929 (2008)