材料化学前沿  >> Vol. 5 No. 3 (July 2017)

氧化铜–硅同轴纳米线阵列结构的生长与控制
Growth Control of CuO-Si Coaxial Nanowire Array

DOI: 10.12677/AMC.2017.53008, PDF, HTML, XML, 下载: 1,207  浏览: 2,764  国家自然科学基金支持

作者: 曾 力, 高 云, 夏晓红*:湖北大学材料科学与工程学院,湖北 武汉

关键词: 阳极氧化等离子体增强化学气相沉积硅–氧化铜同轴纳米线阵列微观结构Anodic Oxidation PECVD Si-CuO Coaxial Nanowires Array Microstructure

摘要: 氧化铜–硅核–壳纳米线阵列结构被广泛应用于各类传感器和锂离子电池等领域。本文通过阳极氧化法制备了高质量的氧化铜纳米线阵列,系统研究了后退火处理对其表面形貌的影响。通过低压气相沉积,在氧化铜表面生成非晶硅壳层结构,通过扫描电镜和拉曼光谱分析,研究不同沉积时间及在不同浓度的碳和硼掺杂条件下对硅纳米线阵列微观结构的影响。
Abstract: CuO-silicon core-shell nanowire array is widely used in various types of sensors and lithium-ion batteries and other fields. In this paper, high quality CuO nanowire array was prepared by anodic oxidation method and the influence of annealing on the surface morphology was studied. Amorphous silicon shell structure was formed on the surface of CuO by low-pressure chemical vapor deposition. The effects of deposition time and doping concentrations of carbon and boron on the microstructure of silicon nanowire arrays were investigated by scanning electron microscopy and Raman spectroscopy.

文章引用: 曾力, 高云, 夏晓红. 氧化铜–硅同轴纳米线阵列结构的生长与控制[J]. 材料化学前沿, 2017, 5(3): 59-69. https://doi.org/10.12677/AMC.2017.53008

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