SnSex薄膜中SnSe与SnSe2两相调控机理研究
The Regulation Mechanism Study of SnSe and SnSe2 in SnSex Thin Films
摘要: 本论文利用分子束外延技术在BaF2 (111)衬底上制备了SnSex薄膜，并利用拉曼光谱和X光电子能谱(XPS)对SnSex薄膜中SnSe、SnSe2两组分的调控机理进行了系统研究，研究结果表明当锡硒原子比率Sn/Se ≈ 1时，以250℃和300℃衬底温度制备的SnSex薄膜均存在SnSe和SnSe2两种组分，提高衬底温度将有利于薄膜中SnSe的形成，当衬底温度由250℃提高到300℃时，XPS中与SnSe、SnSe2相对应的Sn 3d5/2组分峰的强度比ISnSe/SnSe2由0.23提高到了0.54。进一步的研究结果表明，与提高衬底温度相比，通过增大生长过程中锡硒原子比率可更有效地提升薄膜中SnSe的比例，XPS数据显示当锡硒原子比率由Sn/Se ≈ 1提高到Sn/Se ≈ 1.02时，与SnSe、SnSe2相对应的Sn 3d5/2组分峰的强度比ISnSe/SnSe2由0.23提高到了2.38。本论文的研究将为今后纯SnSe相的可控制备提供理论依据。
Abstract: In this paper, SnSex thin films were epitaxially grown on BaF2 (111) substrate using molecular beam epitaxy (MBE), and the regulation mechanism of SnSe and SnSe2 components in SnSex thin films with substrate temperature and the Sn-to-Se atomic ratio is systematically studied by means of Raman spectra and X-ray photoemission spectroscopy (XPS). The results indicated that with the atomic ratio of Sn/Se ≈ 1, both SnSe and SnSe2 components are present in SnSex thin films at the substrate temperature of 250˚C and 300˚C, the enhancement of the substrate temperature will fa-cilitate the formation of SnSe in the film. When the substrate temperature is increased from 250˚C to 300˚C, the intensity ratio (ISnSe/SnSe2) of the Sn 3d5/2 component peak corresponding to SnSe, SnSe2 in the XPS is increased from 0.23 to 0.54. Further research results show that the ratio of SnSe in the film can be more effectively enhanced by increasing the Sn-to-Se atomic ratio in the growth process compared with increasing the substrate temperature. The XPS data showed that when the Sn-to-Se atomic ratio was increased from Sn/Se ≈ 1 to Sn/Se ≈ 1.02, the intensity ratio (ISnSe/SnSe2) of the Sn 3d5/2 component peak corresponding to SnSe and SnSe2 was increased from 0.23 to 2.38. The researches in this paper will provide theoretical references for future controllable preparation of pure SnSe phase.
文章引用：陈娜, 牛逸潇, 唐家豪, 张凯凯, 陈俏宇, 朱希, 唐曙锋, 潘媛媛. SnSex薄膜中SnSe与SnSe2两相调控机理研究[J]. 现代物理, 2019, 9(1): 48-53. https://doi.org/10.12677/MP.2019.91007

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