硅基重构表面上金属初期生长行为研究
Initial Growth Behavior of Metals on Reconstructed Silicon Surfaces
DOI: 10.12677/MS.2019.94053, PDF,   
作者: 张 睿, 胡 蔚, 周颖慧：厦门大学物理系，福建 厦门
关键词: Si(111)；银；锡；成核；扫描隧道显微镜；Si(111)； Ag； Sn； Nucleation； Scanning Tunneling Microscopy
摘要: 本文利用超高真空扫描隧道显微镜，研究了Ag和Sn两种金属在Si(111)衬底的不同重构表面上的初期生长和结构演变过程。通过观察低覆盖度下Ag和Sn在7 × 7表面上的吸附成核，探索有序团簇阵列的制备条件。进一步比较两种金属在各自与硅形成的√3×√3重构表面上的生长行为差异，并根据其生长特性提出一种在√3×√3-Sn表面制备单原子层厚Sn覆盖层的方法。
Abstract: In this work, the initial growth and structural evolution of Ag and Sn on reconstructed Si(111) surfaces were investigated under ultrahigh vacuum conditions with scanning tunneling microscopy. We studied the adsorption and nucleation of Ag and Sn on 7 × 7 surface at low coverage, and figured out the preparation condition for ordered Sn cluster arrays. The growth behavior of Ag and Sn on √3×√3 reconstructed surfaces was further compared. In the light of the growth characteristics of Sn on √3×√3-Sn surface, a fabrication method of Sn layer with atomic thickness on Si substrate was proposed.
文章引用：张睿, 胡蔚, 周颖慧. 硅基重构表面上金属初期生长行为研究[J]. 材料科学, 2019, 9(4): 411-417. https://doi.org/10.12677/MS.2019.94053

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