|
[1]
|
L. Esaki, R. Tsu. Superlattice and negative differential conductivity in semiconductors. IBM Journal of Research and Development, 1970, 14(1): 61-65.
|
|
[2]
|
黄和鸾. 半导体超晶格——材料与应用[M]. 沈阳: 辽宁大学出版社, 1992.
|
|
[3]
|
N. G. Sun, D. Q. Yuan and W. D. Deering. Electric-field-induced changes in the transmission spectrum of a superlattice. Physical Review B, 1995, 51(7): 4641-4644.
|
|
[4]
|
L. L. Chang, L. Esaki and R. Tsu. Resonant tunneling in semi- conductor double barriers. Applied Physics Letters, 1974, 24(12): 593-595.
|
|
[5]
|
M. J. Kelly. Tunnelling in quantum-well structures. Electronics Letters, 1984, 20(19): 771-772.
|
|
[6]
|
M. O. Vasell, J. Lee and H. F. Lockwood. Multibarrier tunneling in Ga1–xAlx/GaAs heterostructures. Journal of Applied Physics, 1983, 54(9): 5206-5213.
|
|
[7]
|
C. Rauch, G. Strasser, K. Unterrainer, W. Boxleitner, E. Gornik and A. Wacker. Transition between coherent and incoherent Electron Transport in Ga/GaAlAs superlattices. Physical Review Letters, 1998, 81(16): 3495-3498.
|
|
[8]
|
F. Borondo, J. Sanchez-Dehesa. Electronic structure of a GaAs quantum well in an electric field. Physical Review B, 1986, 33(12): 8758-8761.
|
|
[9]
|
E. J. Austin, M. Jaros. Electronic structure of an isolated GaAs- GaA1As quantum well in a strong electric field. Physical Review B, 1985, 31(8): 5569-5572.
|
|
[10]
|
B. Jogai, K. L. Wang. Interband optical transitions in GaAs- Ga1–xAlxAs superlattices in an applied electric field. Physical Review B, 1987, 35(2): 653-659.
|
|
[11]
|
M. Nakayama, M. Ando, I. Tanaka, et al. Electric-field effects on above-barrier states in a GaAs/AlxGa1–xAs superlattice. Physical Review B, 1995, 51(7): 4236-4241.
|
|
[12]
|
D. A. B. Miller, D. S. Chemla, T. C. Damen, et al. Electric field dependence of optical absorption near the band gap of quantum- well structures. Physical Review B, 1985, 32(2): 1043-1060.
|
|
[13]
|
R. Biswas, S. Mukhopadhyay and C. Sinha. Biased driven resonant tunneling through a double barrier graphene based structure. Physics E, 2010, 42(5): 1781-1786.
|
|
[14]
|
T. Noda, N. Koguchi. Current-voltage characteristics in double- barrier resonant tunneling diodes with embedded GaAs quantum rings. Physics E, 2006, 32(1-2): 550-553.
|
|
[15]
|
G. Sun, Y. J. Ding, G. Y. Liu, et al. Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells. Applied Physical Letters, 2010, 97(2): Article ID 021901-1-021904-3.
|
|
[16]
|
夏建白, 朱邦芬. 半导体超晶格物理[M]. 上海: 上海科学技术出版社, 1995.
|
|
[17]
|
A. Rogalski. Quantum well photoconductors in infrared detector technology. Journal of Applied Physics, 2003, 93(8): 4355-4390.
|
|
[18]
|
T. H. Wood, C. A. Burrus, D. A. B. Miller, et al. Hight-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure. Applied Physical Letters, 1984, 44(1): 16-18.
|
|
[19]
|
D. A. B. Miller, D. S. Chemla, T. C. Damen, et al. Novel hybrid optically bistable switch: The quantum well self-electro-optic effect device. Applied Physical Letters, 1984, 45(1): 13-15.
|
|
[20]
|
R. Tsu, L. Esaki. Tunneling in a finite superlattice. Applied Physical Letters, 1973, 22(11): 562-564.
|
|
[21]
|
K. Mukherjee, N. R. Das. Tunneling current calculations for nonuniform and asymmetric multiple quantum well structures. Journal of Applied Physics, 2011, 109(5): Article ID 053708- 1-053708-6.
|
|
[22]
|
Y. Ando, T. Itoh. Calculation of transmission tunneling current across arbitrary potential barriers. Journal of Applied Physics, 1987, 61(4): 1497-1502.
|
|
[23]
|
B. Jonsson, S. T. Eng. Solving the Schrödinger equation in arbitrary quantum-well potential profiles using the transfer matrix method. IEEE Journal of Quantum Electronics, 1990, 26(11): 2025-2035.
|
|
[24]
|
R. Gilmore. Elementary quantum mechanics in one dimension. Baltimore: The Johns Hopkins University Press, 2004.
|