SiC纳米线紫外光探测器光电性能的研究
Fabrication and Properties of Ultraviolet Photo-Detector Based on SiC Nanowires
DOI: 10.12677/nat.2012.22004, PDF, HTML, 下载: 3,640  浏览: 12,826  国家自然科学基金支持
作者: 于晓燕, 彭刚*, 李公义, 何焰蓝, 周应秋：国防科学技术大学理学院
关键词: 紫外光探测器；SiC纳米线；化学气相沉积法
Ultraviolet Photodetector (UVPD); SiC Nanowires; Chemical Vapor Deposition (CVD)
摘要: 基于一束高取向排列的SiC纳米线，本文制备了一种新型的紫外光探测器，并测试研究了其光电性能。采用传统化学气相沉积技术，以二茂铁为催化剂，通过聚合物热解的方法制备了长度达数厘米、直径为100~200 nm的SiC纳米线。探测器由导电银浆固定一束高取向排列的SiC纳米线到器件基座两个引脚上形成，其光电性能测试研究表明，器件暗电流很小、并且在254 nm紫外光照射时，其光电流迅速变大；器件反应时间很短而回复时间相对较长。
Abstract: A new type of Ultraviolet Photodetector (UVPDs) based on a bundle of highly aligned SiC nanowires was fabricated and the photo-electric properties of the UVPDs including I-V characteristic and time response et al. were studied in this paper. SiC nanowires were prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a CVD route. The diameter of SiC nanowires varied from 100 to 200 nm while they were some centimeters long. A bundle of nanowires was fixed onto two legs in a custom base by conductive silver paste to form the UVPDs. The electrical measurements of the device show a big increase of current when explored the device to 254 nm UV light, and the rise time of the device is very short, but the fall time is relatively long.
文章引用：于晓燕, 彭刚, 李公义, 何焰蓝, 周应秋. SiC纳米线紫外光探测器光电性能的研究[J]. 纳米技术, 2012, 2(2): 19-22. http://dx.doi.org/10.12677/nat.2012.22004

参考文献

[1] N. Kondrath, M. K. Kazimierczuk. Characteristics and applications of silicon carbide power devices in power electronics. In- ternational Journal of Electronics and Telecommunications, 2010, 56(3): 231-236.
[2] E. Borchi, R. Macii, M. Bruzzi, et al. Characterisation of SiC photo-detectors for solar UV radiation monitoring. Nuclear Instruments and Methods in Physics Research A, 2011, 658(1): 121-124.
[3] E. Pace, A. D. Sio. Innovative diamond photo-detectors for UV astrophysics. Memorie Dellac SAIt Supplementi, 2010, 14(84): 84-89.
[4] X. Sun, D. Li, H. Jiang, et al. Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface. Applied Physics Letters, 2011, 98: Article ID 121117.
[5] G. Kwak, M. Seol, Y. Tak, et al. Superhydrophobic ZnO nanowire surface: Chemical modification and effects of UV irradiation. Journal of Physical Chemistry C, 2009, 113(28): 12085-12089.
[6] S. S. Hullavarad, N. V. Hullavarad, P. C. Karulkar, et al. Ultra violet sensors based on nanostructured ZnO spheres in network of nanowires: A novel approach. Nanoscale Research Letters, 2007, 2(3): 161-167.
[7] C. Bin, Y. Yin-Tang, C. Chang-Chun, et al. Quantitatively exploring the effect of a triangular electrode on performance enhancement in a 4H-SiC metal-semiconductor-metal ultraviolet photodetector. Chinese Physics Letter, 2011, 28(6): Article ID 068501.
[8] Y. Xie, H. Huang, W. Yang, et al. Low dark current metal- semiconductor-metal ultraviolet photodetectors based on sol-gel- derived TiO2 films. Journal of Applied Physics, 2011, 109(2): Article ID 023114.
[9] H. Xue, X. Kong, Z. Liu, et al. TiO2 based metal- semiconduc- tor-metal ultraviolet photodetectors. Applied Physics Letters, 2007, 90(20): Article ID 201118.
[10] I. Ciancaglioni, M. Marinelli, E. Milani, et al. Secondary elec- tron emission in extreme-UV detectors: Application to diamond based devices. Journal of Applied Physics, 2011, 110(1): Article ID 014501.
[11] J. Chen, Q. Shi and W. Tang. Field emission performance of SiC nanowires directly grown on graphite substrate. Materials Chem- istry and Physics, 2011, 126(3): 655-659.
[12] X. Wang, B. Tang, F. Gao, et al. Large-scale synthesis of hydro- phobic SiC/C nanocables with enhanced electrical properties. Journal of Physics D: Applied Physics, 2011, 44(24): Article ID 245404.
[13] G. Y. Li, X. D. Li, Z. D. Chen, et al. Large areas of centimeters-long SiC nanowires synthesized by pyrolysis of a polymer precursor by a CVD route. Journal of Physical Chemistry C, 2009, 113(41): 17655-17660.
[14] O. Katz, V. Garber, B. Meyler, et al. Gain mechanism in GaN Schottky ultraviolet detectors. Applied Physics Letters, 2001, 79(10): 1417-1419.
[15] N. Vanhove, J. John, A. Lorenz, et al. ITON Schottky contacts for GaN based UV photodetectors. Applied Surface Science, 2006, 253(5): 2930-2932.
[16] Y. Liu, C. R. Gorla and S. Liang. Ultraviolet detectors based on epitaxial ZnO films grown by MOVCD. Journal of Electronic Materials, 2000, 29(1): 69-74.
[17] S. V. Averine, Y. C. Chan and Y. L. Lam. Geometry optimization of interdigitated Schottky-barrier metal-semiconductor-metal photo- diode structures. Solid-State Electronics, 2001, 45: 441- 446.
[18] E. Monroy, T. Palacios, O. Hainaut, et al. Assessment of GaN metal-semiconductor-metal photodiodes for high-energy ultraviolet photodetection. Applied Physics Letters, 2002, 80(17): 3198-3200.

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