[1]
|
刘翔, 薛建设, 贾勇, 等. 金属氧化物IGZO薄膜晶体管的最新研究进展[J]. 现代显示, 2010(10): 28-32.
|
[2]
|
韦唯砚. 铟镓锌氧化物薄膜晶体管的研究[D]: [硕士学位论文]. 北京: 北京交通大学, 2011.
|
[3]
|
李远洁, 江凯, 刘子龙. 低温增强型非晶铟镓锌氧薄膜晶体管特性研究[J]. 西安交通大学学报, 2015, 49(12): 1-5.
|
[4]
|
Kamiya, T. and Hosono, H. (2010) Material Characteristics and Applications of Transparent Amorphous Oxide Semiconductors. NPG Asia Materials, 2, 15-22. https://doi.org/10.1038/asiamat.2010.5
|
[5]
|
Hideo, H. (2006) Ionic Amorphous Oxide Semiconductors: Material Design, Carrier Transport, and Device Application. Journal of Non-Crystalline Solids, 352, 851-858. https://doi.org/10.1016/j.jnoncrysol.2006.01.073
|
[6]
|
苏雪琼, 王丽, 甘渝林, 李宬汉. 非晶InGaZnO薄膜成分配比对透明性和迁移率的影响[J]. 强激光与粒子束, 2014, 26(12): 49-52.
|
[7]
|
Leenheer, A.J., Perkins, J., Maikel, F.A., et al. (2008) General Mobility and Carrier Concentration Relationship in Transparent Amor-phous Indium Zinc Oxide Films. Physical Review B, 77, Article ID: 115215.
https://doi.org/10.1103/PhysRevB.77.115215
|
[8]
|
Suresh, A., Gollakota, P., Wellenius, P., et al. (2008) Trans-parent, High Mobility InGaZnO Thin Films Deposited by PLD. Thin Solid Films, 516, 1326-1329. https://doi.org/10.1016/j.tsf.2007.03.153
|
[9]
|
陈江博, 王丽, 苏雪琼. InGaZnO多晶靶材制备与薄膜生长的研究[J]. 中国激光, 2009, 36(s2): 364-367.
|
[10]
|
Lee, Y.-S., Dai, Z.-M., Lin, C.-I., et al. (2012) Relationships between the Crystalline Phase of an IGZO Target and Electrical Properties of a-IGZO Channel Film. Ceramics International, 38S, 595-599.
https://doi.org/10.1016/j.ceramint.2011.05.105
|
[11]
|
孟璇. IGZO粉末固相反应合成机制研究[D]: [硕士学位论文]. 昆明: 昆明理工大学, 2015.
|
[12]
|
孟璇, 陈敬超, 贾清翠, 等. 固相烧结反应法制备IGZO粉末[J]. 粉末冶金材料科学与工程, 2015, 20(4): 590-594.
|
[13]
|
Lo, C.C. and Hsieh, T.E. (2012) Preparation of IGZO Sputtering Target and Its Applications to Thin-Film Transistor Devices. Ceramics International, 38, 3977-3983. https://doi.org/10.1016/j.ceramint.2012.01.052
|
[14]
|
苏文俊, 陈坚, 袁铁锤, 等. 烧结温度对放电等离子烧结法制备IGZO靶材的影响研究[J]. 矿冶工程, 2016, 36(1): 114-116.
|
[15]
|
周贤界, 许积文, 魏秋平, 等. 粉体及制备工艺对IGZO靶材致密度及形貌的影响[J]. 材料热处理学报, 2017, 38(7): 16-22.
|
[16]
|
柳逢春, 喻志农, 杨伟声, 等. IGZO薄膜溅射功率对IGZO TFT栅电压不稳定性的影响[J]. 光学技术, 2014, 40(5): 476-480.
|
[17]
|
闫小兵, 史守山, 娄建忠, 等. RF磁控溅射沉积压强对InGaZnO4薄膜特性的影响[J]. 河北大学学报, 2015, 35(3): 243-246.
|
[18]
|
江凯, 李远洁, 毛玉政, 等. 磁控溅射氧气流量对非晶InGaZnO薄膜特性的影响研究[J]. 真空科学与技术学报, 2015, 35(10): 1180-1184.
|
[19]
|
Mativenga, M., An, S. and Jin, J. (2013) Bulk Accumulation a-IGZO TFT for High Current and Turn-On Voltage Uniformity. IEEE Electron Device Letters, 34, 1533-1535. https://doi.org/10.1109/LED.2013.2284599
|
[20]
|
Jin, S., Kim, T.W., Seol, Y.G., et al. (2014) Reduction of Posi-tive-Bias-Stress Effects in Bulk-Accumulation Amorphous-InGaZnO TFTs. IEEE Electron Device Letters, 35, 560-562. https://doi.org/10.1109/LED.2014.2311172
|
[21]
|
Xu, Y., Liu, C., Amegadez, et al. (2015) On the Origin of Improved Charge Transport in Double-Gate In-Ga-Zn-O Thin-Film Transistors: A Low-Frequency Noise Perspective. IEEE Electron Device Letters, 36, 1040-1043.
https://doi.org/10.1109/LED.2015.2467164
|
[22]
|
Mudgal, T., Walsh, N., Manley, R.G., et al. (2014) Impact of Annealing on Contact Formation and Stability of IGZO TFTs. Journal of Solid State Science and Technology, 3, 3032-3034. https://doi.org/10.1149/2.006409jss
|
[23]
|
Jeon, J.-H., Gong, T.-K., Kong, Y.-M., et al. (2015) Effect of Post-Deposition Annealing on the Structural, Optical and Electrical Properties of IGZO Films. Electronic Materials Letters, 11, 481-484.
https://doi.org/10.1007/s13391-014-4410-1
|
[24]
|
Oh, Se.-I., et al. (2013) Hydrogenated IGZO Thin-Film Transis-tors Using High-Pressure Hydrogen Annealing. Transactions on Electron Devices, 60, 2537-2541. https://doi.org/10.1109/TED.2013.2265326
|
[25]
|
Fujii, M.N., et al. (2014) Vapor-Induced Improvements in Field Effect Mobility of Transparent a-IGZO TFTs. Journal of Solid State Science and Technology, 3, 3050-3053. https://doi.org/10.1149/2.011409jss
|
[26]
|
李倩, 李喜峰, 张建华. 热处理气氛对溶胶-凝胶法制备a-InGaZnO TFT器件的影响[J]. 功能材料, 2013, 44(3): 442-445.
|
[27]
|
Alford, T.L., Gadre, M.J. and Vemuri Rajitha, N.P. (2013) Improved Mobility and Transmittance of Room Temperature Deposited Amorphous Indium Gallium Zinc Oxide (a-IGZO) Films with Low-Temperature Post-Fabrication Anneals. The Journal of the Minerals, Metals & Materials Society, 65, 519-524.
https://doi.org/10.1007/s11837-013-0569-4
|
[28]
|
Chuang, C., Fung, T., Mullins, B.G., et al. (2012) Photosensitiv-ity of Amorphous IGZO TFTs for Active-Matrix Flat-Panel Displays. Sid Symposium Digest of Technical Papers, 39, 1215-1218. https://doi.org/10.1889/1.3069354
|
[29]
|
Seo, H.S., Bae, J.U., Kim, D.W., et al. (2010) Development of Highly Stable a-IGZO TFT with TiOx as a Passivation Layer for Active-Matrix Display. Sid Symposium Digest of Technical Papers, 41, 1132-1135.
https://doi.org/10.1889/1.3499856
|
[30]
|
Chen, T.C., Chang, T.C., Tsai, C.T., et al. (2010) Behaviors of InGaZnO Thin Film Transistor under Illuminated Positive Gate-Bias Stress. Applied Physics Letters, 97, 112104-112106. https://doi.org/10.1063/1.3481676
|
[31]
|
Oh, H., Yoon, S.M., Ryu, M.K., et al. (2011) Transition of Dominant In-stability Mechanism Depending on Negative Gate Bias under Illumination in Amorphous In-Ga-Zn-O Thin Film Tran-sistor. Applied Physics Letters, 98, Article ID: 033504. https://doi.org/10.1063/1.3540500
|
[32]
|
Kamiya, T., Hosono, H., Nomura, K., et al. (2010) Present Status of Amorphous In-Ga-Zn-O Thin-Film Transistors. Science and Technology of Advanced Materials, 11, Article ID: 044305.
https://doi.org/10.1088/1468-6996/11/4/044305
|
[33]
|
Xiao, X., Deng, W., Chi, S., et al. (2013) Effect of O2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced Vth Shift of a-IGZO TFTs. IEEE Transactions on Electron Devices, 60, 4159-4164.
https://doi.org/10.1109/TED.2013.2286636
|
[34]
|
Raja, J., Jang, K., Nguyen, H.H., et al. (2013) Enhancement of Electrical Stability of a-IGZO TFTs by Improving the Surface Morphology and Packing Density of Active Channel. Current Applied Physics, 13, 246-251.
https://doi.org/10.1016/j.cap.2012.07.016
|
[35]
|
Li, X., Xin, E., Chen, L., et al. (2013) Effect of Etching Stop Layer on Characteristics of Amorphous IGZO Thin Film Transistor Fabricated at Low Temperature. AIP Advances, 3, Article ID: 032137. https://doi.org/10.1063/1.4798305
|
[36]
|
Zeng, M., Chen, S.J., Liu, X.D., et al. (2017) Effect of Light Shielding Metal on the Performance of a-IGZO TFTs with a Self-Aligned Top-Gate Structure. Sid Symposium Digest of Technical Papers, 48, 1234-1237.
https://doi.org/10.1002/sdtp.11873
|
[37]
|
Abe, K., Takahashi, K. and Sato, A. (2012) Amorphous In-Ga-Zn-O Du-al-Gate TFTs: Current-Voltage Characteristics and Electrical Stress Instabilities. IEEE Transactions on Electron Devices, 59, 1928-1935.
https://doi.org/10.1109/TED.2012.2195008
|
[38]
|
Seok, M.J., Mativenga, M., Geng, D., et al. (2013) Achieving High Performance Oxide TFT-Based Inverters by Use of Dual-Gate Configurations with Floating and Biased Secondary Gates. IEEE Transactions on Electron Devices, 60, 3787-3793. https://doi.org/10.1109/TED.2013.2280912
|
[39]
|
蔡旻熹, 姚若河. 双栅非晶InGaZnO薄膜晶体管有源层厚度对电学性能的影响[J]. 华南理工大学学报, 2016, 44(9): 61-66.
|
[40]
|
张丽, 许玲, 董承远. 非晶IGZO薄膜晶体管驱动OLED像素电路的仿真研究[J]. 发光学报, 2014, 35(10): 1264-1268.
|