氧压变化对脉冲激光沉积法制备BeMgZnO四元合金薄膜性能的影响
The Influence of Oxygen Pressure on Properties of Pulsed Laser Deposited BeMgZnO Quaternary Alloy Thin Films
DOI: 10.12677/MS.2018.85065, PDF,    国家自然科学基金支持
作者: 杨蓉慧子, 黎明锴, 常 钢, 卢寅梅*, 何云斌：湖北大学材料科学与工程学院，湖北 武汉
关键词: BeMgZnO；四元合金；薄膜；共取代；脉冲激光沉积；BeMgZnO； Quaternary Alloy； Thin Film； Co-Substitution； PLD
摘要: 本工作采用脉冲激光沉积法，以BeMgZnO陶瓷为靶材、c面蓝宝石为衬底，在固定衬底温度700˚C、改变沉积氧压条件下制备BeMgZnO四元合金薄膜。采用X射线衍射、X射线光电子能谱、紫外-可见光谱法系统表征研究了这些薄膜。结果表明，通过Be-Mg共取代ZnO，有效提高了Mg在合金薄膜中的含量。当Mg的含量达到44.4％时，BeMgZnO薄膜中仍无相分离发生，并且此时BeMgZnO薄膜的带隙达到4.19 eV，在可见光波段的透过率也高达85％。
Abstract: BeMgZnO quaternary alloy thin films were grown on the c-plane sapphire substrates by pulsed la-ser deposition (PLD) method using BeMgZnO ceramics target. The films were grown at a fixed substrate temperature of 700˚C and various O2 pressures. X-ray diffraction, X-ray photoelectron spectroscopy and UV-Vis spectrophotometry were used to characterize the films. By Be-Mg co-substitution in ZnO, the solid solubility of Mg in the BeMgZnO quaternary alloy films was in-creased largely. Even when the Mg content reached 44.4%, no phase segregation was found in the BeMgZnO quaternary alloy thin film. Meanwhile, the band gap of the BeMgZnO film was enlarged to 4.19 eV, and its visible-light transmittance exceeded 85%.
文章引用：杨蓉慧子, 黎明锴, 常钢, 卢寅梅, 何云斌. 氧压变化对脉冲激光沉积法制备BeMgZnO四元合金薄膜性能的影响[J]. 材料科学, 2018, 8(5): 559-566. https://doi.org/10.12677/MS.2018.85065

参考文献

[1] Xu, L.G., Qiu, W., Chen R.F., Zhang, H.M. and Huang, W. (2018) Application of ZnO Electrode Buffer Layer in Perovs Kite Solar Cells. Acta Physico-Chimica Sinica, 34, 36-48.
[2] Su, L.X., Zhu, Y., Yong, D.Y., Chen, M.M., Ji, X., Su, Y.Q., Gui, X.C., Pan, B.C., Xiang, R. and Tang, Z.K. (2014) Wide Range Bandgap Modulation Based on ZnO-Based Alloys and Fabrication of Solar Blind UV Detectors with High Rejection Ratio. ACS Applied Materials & Interfaces, 6, 14152-14158.
[Google Scholar] [CrossRef] [PubMed]
[3] Özgür, Ü., Alivov, Y.I., Liu, C., Teke, A., Reshchikov, M.A., Doğan, S., Avrutin, V., Cho, S.J. and Morkoç, H. (2005) A Comprehensive Review of ZnO Materials and Devices. Journal of Applied Physics, 98, Article ID: 041301.
[Google Scholar] [CrossRef] 
[4] Lee, C.T. (2010) Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes. Materials, 3, 2218-2259.
[Google Scholar] [CrossRef] 
[5] Liu, K.W., Sakurai, M. and Aono, M. (2010) ZnO-Based Ultraviolet Photodetectors. Sensors, 10, 8604-8634.
[Google Scholar] [CrossRef] [PubMed]
[6] Yang, J.L., Liu, K.W. and Shen, D.Z. (2017) Recent Progress of ZnMgO Ultraviolet Photodetector. Chinese Physics B, 26, Article ID: 047308.
[Google Scholar] [CrossRef] 
[7] Zhang, L., Li, L., Wang, L.H., Li, L.K., Lu, Y.M., Meyer, B.K. and He, Y.B. (2014) Tuning the Composition and Optical Band Gap of Pulsed Laser Deposited ZnO1-xSx Alloy Films by Controlling the Substrate Temperature. Journal of Alloys and Compounds, 617, 413-417.
[Google Scholar] [CrossRef] 
[8] Zheng, L.L., Lin, Y.Y., Li, L., Liang, G.J., Li, M.K., Li, P. and He, Y.B. (2015) Structural Properties and Enhanced Bandgap Tunability of Quaternary CdZnOS Epitaxial Films Grown by Pulsed Laser Dep-osition. Journal of Alloys and Compounds, 650, 748-752.
[Google Scholar] [CrossRef] 
[9] He, Y.B., Cheng, H.L., Tai, J.L., Li, L., Zhang, L., Li, M.K., Lu, Y.M., Zhang, W. and Meyer, B.K. (2015) Single-Phase Quaternary MgxZn1-xO1-ySy Alloy Thin Films Grown by Pulsed Laser Deposition. Journal of Applied Physics, 117, Article ID: 065301.
[Google Scholar] [CrossRef] 
[10] Zhang, W.Z., Xu, M.J., Zhang, M., Cheng, H.L., Li, M.K., Zhang, Q.F., Lu, Y.M., Chen, J.W., Chen, C.Q. and He, Y.B. (2018) Pulsed Laser Deposited BexZn1-xO1-ySy Quaternary Alloy Films: Structure, Composition, and Band Gap Bowing. Applied Surface Science, 433, 674-679.
[Google Scholar] [CrossRef] 
[11] Ghosh, R. and Basak, D. (2007) Composition Dependent Ultraviolet Photoresponse in MgxZn1-xO Thin Films. Journal of Applied Physics, 101, Article ID: 113111.
[Google Scholar] [CrossRef] 
[12] Ohtomo, A., Kawasaki, M., Koida, T., Masubuchi, K., Koinuma, H., Sakurai, Y., Yoshida, Y., Yasuda, Y. and Segawa, Y. (1998) MgxZn1 xO as a II-VI Widegap Semiconductor Alloy. Applied Physics Letters, 72, 2466-2468.
[Google Scholar] [CrossRef] 
[13] Su, X.Y., Si, P.P., Hou, Q.Y., Kong, X.L. and Cheng, W. (2009) First-Principles Study on the Bandgap Modulation of Be and Mg Co-Doped ZnO Systems. Physica B: Condensed Matter, 404, 1794-1798.
[Google Scholar] [CrossRef] 
[14] Zhu, Y., Su, L.X., Chen, M.M., Su, Y.Q., Ji, X., Gui, X.C. and Tang, Z.K. (2015) Controlled Growth of Epitaxial Wurtzite BeMgZnO Alloy Films and Two Microscopic Origins of Be-Mg Mutual Stabilizing Mechanism. Journal of Alloys and Compounds, 631, 355-359.
[Google Scholar] [CrossRef] 
[15] Vettumperumal, R., Kalyanaraman, S. and Thangavel, R. (2013) Nano-crystalline Zn1−x−yBexMgyO Thin Films Synthesized by the Sol-Gel Method: Structural and Near Infrared Photoluminescence Proper-ties. Journal of Sol-Gel Science and Technology, 68, 334-440.
[Google Scholar] [CrossRef] 
[16] Ullah, M.B., Ding, K., Nakagawara, T., Avrutin, V., Ozgur, U. and Morkoc, H. (2018) Characterization of Ag Schottky Barriers on Be0.02Mg0.26ZnO/ZnO Heterostructures. Physica Status Solidi-Rapid Research Letters, 12, Article ID: 1700366.
[Google Scholar] [CrossRef] 
[17] Ding, K., Ullah, M.B., Avrutin, V., Ozgur, U. and Morkoc, H. (2017) Investi-gation of High Density Two-Dimensional Electron Gas in Zn-Polar BeMgZnO/ZnO Heterostructures. Applied Physics Letters, 111, Article ID: 182101.
[Google Scholar] [CrossRef] 
[18] Toporkov, M., Ullah, M.B., Demchenko, D.O., Avrutin, V., Morkoç, H. and Özgür, Ü. (2017) Effect of Oxygen-to-Metal Flux Ratio on Incorporation of Metal Species into Quaternary BeMgZnO Grown by Plas-ma-Assisted Molecular Beam Epitaxy. Journal of Crystal Growth, 467, 145-149.
[Google Scholar] [CrossRef] 
[19] Chen, S.S., Pan, X.H., Li, Y.G., Chen, W., Zhang, H.H., Dai, W., Ding, P., Huang, J.Y., Lu, B. and Ye, Z.Z. (2015) Improved Photoluminescence Performance of MgZnO Films by Alloying Beryllium. Physics Letters A, 379, 912-915.
[Google Scholar] [CrossRef] 
[20] Toporkov, M., Avrutin, V., Okur, S., Izyumskaya, N., emchenko, D.D., Volk, J., Smith, D.J., Morkoç, H. and Özgür, Ü. (2014) Enhancement of Be and Mg Incorporation in Wurtzite Quaternary BeMgZnO Alloys with up to 5.1 eV Optical Bandgap. Journal of Crystal Growth, 402, 60-64.
[Google Scholar] [CrossRef] 

为你推荐