硼掺杂对螺旋碳纳米管微波吸收性能的影响研究
Effect of Boron Doping on Microwave Absorption Properties of Helical Carbon Nanotubes
摘要: 对氧化硼和螺旋碳纳米管(HCNTs)的混合物进行热处理，合成了掺硼螺旋碳纳米管(B-HCNTs)。FE-SEM的结果表明，在掺硼过程中，HCNTs的结构得到了很好的保留，XPS分析表明，HCNTs的结构中确实掺杂了硼原子。B-HCNTs的最佳反射损耗值为−50.19 dB，吸收带宽为3.40 GHz，具有较好的电磁波吸收能力。详细分析了B-HCNTs增强的电磁波吸收能力。所设计的B-HCNTs样品工艺简单、密度低、化学稳定性好，是一种很有前途的轻质高效微波吸收材料。
Abstract: Boron-doped helical carbon nanotubes (B-HCNTs) were synthesized by thermal annealing helical carbonnanotubes (HCNTs) in the presence of boric oxid. The investigation of FE-SEM revealed that the structures of HCNTs were well retained during the boron doping process, and XPS analysis demonstrated that the boron atoms were indeed doped in the structure of HCNTs. The as-prepared B-HCNTs displayed superior electromagnetic wave absorption capabilities in terms of the optimal reflection loss value of −50.19 dB and the absorption bandwidth of 3.4 GHz. And the enhanced EMW absorption capabilities of B-HCNTs were analyzed in details. Considering the simple process, low density and high chemical stability, the designed B-HCNTs samples are very promising candidates for lightweight and high-efficiency microwave absorption materials.
文章引用：邹佩倚, 张森, 杨润芝, 韦万德, 向宇月. 硼掺杂对螺旋碳纳米管微波吸收性能的影响研究[J]. 现代物理, 2021, 11(3): 52-58. https://doi.org/10.12677/MP.2021.113007

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