P型赝三元半导体掺SWCNTs复合材料的微观结构与热电性能

Microstructure and Thermoelectric Properties of P-Type Pseudo-Ternary Semiconductor Composites Doped with SWCNTs

摘要: 本文采用湿混热压法将单壁碳纳米管(SWCNTs)按特定比例与P型赝三元(Sb₂Te₃-Bi₂Te₃-Sb₂Se₃)合金粉体混合制备SWCNTs/(Bi₂Te₃)_0.72(Sb₂Te₃)_0.25(Sb₂Se₃)_0.03复合材料，探究SWCNTs的掺入对材料热电性能的影响机制。研究结果表明，SWCNTs的掺入导致复合材料的Seebeck系数、电导率和热导率均有提升，最终导致热电优值明显提高，这主要是SWCNTs的掺入改变了材料的微观结构和载流子的输运规律导致的，说明掺入SWCNTs有望提高P型赝三元半导体材料的热电性能，本文相关研究结果可为热电材料性能的优化提供理论指导与实验依据。

Abstract: In this paper, the SWCNTs/(Bi₂Te₃)_0.72(Sb₂Te₃)_0.25(Sb₂Se₃)_0.03 composites were fabricated via the wet-mixing hot-pressing method, where single-walled carbon nanotubes (SWCNTs) were mixed with P-type pseudoternary (Sb₂Te₃-Bi₂Te₃-Sb₂Se₃) alloy powders in a specific ratio. The influence mechanism of SWCNTs doping on the thermoelectric properties of the composites was systematically investigated. The results demonstrate that the incorporation of SWCNTs leads to simultaneous enhancements in the Seebeck coefficient, electrical conductivity and thermal conductivity of the composites, which ultimately contributes to a significant improvement in the figure of merit (ZT). This phenomenon is mainly attributed to the fact that SWCNTs doping modifies the microstructure of the composites and regulates the carrier transport behavior. These findings indicate that SWCNTs doping is a promising strategy to improve the thermoelectric performance of P-type pseudoternary semiconductor materials, and the research results can provide theoretical guidance and experimental basis for the performance optimization of thermoelectric materials.