P型赝三元半导体掺Al块体热电材料的热电性能

Thermoelectric Performance of P-Type Pseudoternary Semiconductor Doped with Al Bulk Thermoelectric Materials

摘要: 本文采用湿混热压法制备了P型赝三元半导体掺Al块体热电材料，研究结果表明，掺Al后，在材料中出现了较多的高导电区和高导热区，从而导致电导率和热导率增高；由于金属Al的高载流子浓度也会相应提高材料的整体载流子浓度，同时掺Al会引入更多的界面缺陷，从而引起载流子散射效应增强，散射因子的降低且载流子浓度的升高共同导致Seebeck系数的降低。

Abstract: In this paper, the P-type pseudoternary semiconductor doped with Al block thermoelectric material is prepared by wet mixing hot pressing method. The results show that there are more high conductivity and high thermal conductivity regions in the material after mixing Al, which leads to the increase of electrical conductivity and thermal conductivity. Because the high carrier concentration of metal Al will correspondingly increase the overall carrier concentration of the material, at the same time, Al doping will introduce more interface defects, which will lead to an enhanced carrier scattering effect. The decrease of scattering factor and the increase of carrier concentration together lead to the decrease of Seebeck coefficient.