|
[1]
|
Mori, K., et al. (2017) Back Side Illuminated High Dynamic Range 3.0μm Pixel Featuring Vertical p-n Junction Capacitance in A Deep Pinned Photodiode. 2017 International Image Sensor Workshop, Hiroshima, 30 May-2 June 2017, 27.
|
|
[2]
|
Park, J., Park, S., Cho, K., Lee, T., Lee, C., Kim, D., et al. (2021) 7.9 1/2.74-Inch 32mpixel-Prototype CMOS Image Sensor with 0.64μ M Unit Pixels Separated by Full-Depth Deep-Trench Isolation. 2021 IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, 13-22 February 2021, 122-124. [Google Scholar] [CrossRef]
|
|
[3]
|
Mori, M., Katsuno, M., Kasuga, S., Murata, T. and Yamaguchi, T. (2004) A 1/4in 2M Pixel CMOS Image Sensor with 1.75 Transistor/Pixel. 2004 IEEE International Solid-State Circuits Conference, San Francisco, 15-19 February 2004, 110-111. [Google Scholar] [CrossRef]
|
|
[4]
|
Goiffon, V., Virmontois, C. and Magnan, P. (2011) Investigation of Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors. 2011 International Electron Devices Meeting, Washington, 5-7 December 2011, 8.4.1-8.4.4. [Google Scholar] [CrossRef]
|
|
[5]
|
Takeuchi, Y., Kunikiyo, T., Kamino, T., Kimura, M., Tanizawa, M. and Yamaguchi, Y. (2015) Investigation of Leakage Current in Pinned Photodiode CMOS Imager Pixel with Negative Transfer-Gate Bias Operation. 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, 9-11 September 2015, 76-79. [Google Scholar] [CrossRef]
|
|
[6]
|
Wang, X., Snoeij, M.F., Rao, P.R., et al. (2004) A CMOS Image Sensor with a Buried-Channel Source Follower. 2008 IEEE International Solid-State Circuits Conference, San Francisco, 3-7 February 2008, 62-595.
|
|
[7]
|
Chen, Y., Wang, X., Mierop, A.J. and Theuwissen, A.J.P. (2009) A CMOS Image Sensor with In-Pixel Buried-Channel Source Follower and Optimized Row Selector. IEEE Transactions on Electron Devices, 56, 2390-2397. [Google Scholar] [CrossRef]
|