基于半导体多量子阱中激子能级的EIT全光开关
All-Optical Switching Based on EIT Effects of Semiconductor Multiple Quantum Wells Exciton Levels
DOI: 10.12677/OE.2013.33007, PDF, HTML,   
作者: 杜鸣笛, 严 伟：湖南科技经贸职业学院电子信息工程学院；华中科技大学武汉光电国家实验室
关键词: 半导体多量子阱；电磁诱导透明；全光开关；Semiconductor Multiple Quantum Wells; EIT; All-Optical Switching
摘要: 我们报道了一种全新的全光开关，该光开关是在半导体多量子阱中基于激子和双激子能级形成的EIT效应，利用量子相干相消效应来减小材料对探测光场的吸收，且探测光场吸收的强度可以通过控制光场来调节。若将控制光场设置为脉冲光场，则可以实现探测光场的开关调制，通过选取适当的控制光场的强度，可以得到约86%的开关效率。
Abstract:  We report a new all-optical switching. The all-optical switching is based on EIT effect of semiconductor multiple quantum wells exciton energy levels, the use of quantum coherence effects can reduce the absorption of the probe light field, and the intensity of the absorption for the probe light field can be adjusted by the control light field. If the control light field is pulse light field, the all-optical switching can be performed. We can select the appropriate intensity of control light field; the efficiency of switching can reach at almost 86%.
文章引用：杜鸣笛, 严伟. 基于半导体多量子阱中激子能级的EIT全光开关[J]. 光电子, 2013, 3(3): 29-33. http://dx.doi.org/10.12677/OE.2013.33007

参考文献

[1] O. A. Kocharovskaaya, Y. I. Khanin. Coherent amplification of an ultrashort pulse in a 3-level medium without a population inversion. JETP Letters, 1988, 48: 630-634.
[2] S. E. Harris. Lasers without inversion-interference of lifetime- broadened resonances. Physical Review Letters, 1989, 62: 1033-1036.
[3] M. C. Phllips, H. Wang. Exciton spin coherence and electromagnetically induced transparency in the transient optical response of GaAs quantum wells. Physical Review B, 2004, 69: 115337
[4] S. M. Ma, H. Xu and B. S. Ham. Electromagnetically induced transparency and slow light in GaAs/AlGaAs multiple quantum wells in a transient regime. Optics Express, 2009, 17: 148902- 148908.
[5] W. Yan, T. Wang and X. M. Li. Electromagnetically induced transparency and theoretical slow light in semiconductor multiple quantum wells. Applied Physics B-Lasers and Optics, 2012, 108: 515-519.
[6] W. Yan, T. Wang and X. M. Li. Theoretical ultraslow bright and dark optical solitons in cascade-type GaAs/AlGaAs multiple quantum wells. Optics Communications, 2012, 285: 3559-3562
[7] W. Yan, T. Wang and X. M. Li. Electromagnetically induced transparency and slow light in a Λ-type three-level system of GaAs/AlGaAs multiple quantum wells. Journal of Modern Optics, 2012, 59: 784-788.
[8] W. Yan, T. Wang and X. M. Li. Tunable amplification and absor- ption properties in double-Λ system of GaAs/AlGaAs multiple quantum wells. Chinese Science Bulletin, 2013, 58: 53-58.
[9] 李淳飞. 纳米光子学全光开关研究研究进展[J]. 物理, 2012, 41(1): 9-19.
[10] 陈明, 李淳飞, 徐迈等. 非线性一维光子晶体光开关与光双稳[J]. 光子学报, 2005, 34(1): 98-101.
[11] H. Kang, G. Hernandez, J. Zhang and Y. Zhu. Phase-controlled light switching at low light levels. Physical Review A, 2006, 73: 011802(R)
[12] J. Zhang, G. Hernandez and Y. Zhu. All-optical switching at ultralow light levels, Opgics Letters, 2007, 32: 1317-1319.
[13] A. C. Dawes, L. Dawes and S. M. Clark. All-optical switching in Rubidium vapor. Science, 2005, 308: 672-674.
[14] M. Wagner, H. Schneider, D. Stehr, et al. Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells. physical review letters, 2010, 105:167401
[15] H. Kang, Y. H. Park, I. B. Sohn, et al. All-optical switching with a biexcitonic double lambda system. Optics Communications, 2011, 284: 1045-1052.

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