高压下InMgI3的机械、电子和光学性质的第一性原理研究
First-Principles Study of Mechanical, Electronic and Optical Properties of InMgI3 under High Pressure
DOI: 10.12677/cmp.2025.144004, PDF,    科研立项经费支持
作者: 张慧梅, 王 静, 钟启巧:长江大学物理与光电工程学院,湖北 荆州
关键词: InMgI3第一性原理机械性质电子性质光学性质InMgI3 First-Principles Mechanical Properties Electronic Properties Optical Properties
摘要: 基于第一性原理方法,本文系统研究了无铅钙钛矿InMgI3在0~60 GPa下的几何结构、机械、电子和光学性质。相关的机械性质研究表明,InMgI3的弹性力学失稳点约为74 GPa。随着压强的增加,该晶体的弹性常数(Cij)、体弹模量(B)、剪切模量(G)、杨氏模量(E)、B/G、泊松比(ν)和各向异性因子(A)均增大。电子性质研究表明,零压下InMgI3表现出间接带隙半导体特性(带隙值为1.24 eV),其带隙在10 GPa时达到最大值(1.782 eV)。光学性质研究表明,该晶体在真空红外探测与能量转换器件等领域具有一定的应用潜力。通过施加外部压强可有效调控InMgI3材料的光学和电子性质。
Abstract: Based on first-principles methods, this study systematically investigates the geometric structure, mechanical, electronic, and optical properties of lead-free perovskite InMgI3 under pressures ranging from 0 to 60 GPa. Mechanical property studies reveal that the instability point of elasticity mechanics of InMgI3 is approximately 74 GPa. With increasing pressure, the crystal exhibits enhanced elastic constants (Cij), bulk elastic modulus (B), shear modulus (G), Young’s modulus (E), B/G ratio, Poisson’s ratio (ν), and anisotropy factor (A). Electronic property analysis demonstrates that InMgI3 exhibits indirect bandgap semiconductor characteristics with bandgap value of 1.24 eV at zero pressure, with the bandgap reaching its maximum value of 1.782 eV at 10 GPa. Optical property studies indicate that this crystal holds potential applications in vacuum infrared detection and energy conversion devices. External pressure can effectively modulate the optical and electronic properties of InMgI3 materials.
文章引用:张慧梅, 王静, 钟启巧. 高压下InMgI3的机械、电子和光学性质的第一性原理研究[J]. 凝聚态物理学进展, 2025, 14(4): 19-29. https://doi.org/10.12677/cmp.2025.144004

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