Ce3+离子修饰Ti3C2TX二维材料及其超级电容器性能研究
Ce3+-Modified Ti3C2Tₓ 2D Material for Supercapacitors
DOI: 10.12677/ms.2026.163056, PDF, HTML, XML,   
作者: 管 朕:哈尔滨师范大学物理与电子工程学院,黑龙江 哈尔滨
关键词: 超级电容器倍率性能离子嵌入Supercapacitors Rate Capability Ion Intercalation
摘要: 二维Ti3C2Tx有着独特的二维结构、高导电性、亲水性、可调层间结构与丰富的活性位点,能够实现高比电容,有着优异的倍率性能与循环稳定性。然而,二维纳米片层易发生堆叠,限制电容性能的发挥,在强酸性电解液中表面官能团易发生氧化,结构易坍塌,影响其化学性能。本文通过Ce3+离子嵌入对Ti3C2Tx表面进行界面工程调控,提高其倍率性能。采用碱处理和离子交换实现Ce3+离子嵌入,使得Ti3C2Tx电极在电流密度1 A·g1时显示出322 F·g1的高比电容,在10 A·g1电流密度下经过30,000次恒流充放电循环后仍保持优异的电化学稳定性,证明Ce3+修饰是提升Ti3C2Tₓ二维材料超级电容器负极性能的有效手段。
Abstract: Two-dimensional Ti3C2Tₓ possesses a unique 2D structure, high electrical conductivity, good hydrophilicity, tunable interlayer structure, and abundant active sites, enabling high specific capacitance as well as excellent rate capability and cycling stability. However, the 2D nanosheets are prone to restacking, which limits the capacitive performance. Moreover, the surface functional groups are easily oxidized and the structure tends to collapse in strongly acidic electrolytes, thus impairing its electrochemical properties. In this work, interface engineering of Ti3C2Tₓ was carried out via Ce3+ ion intercalation to improve its rate capability. Alkali treatment and ion exchange were employed to achieve Ce3+ intercalation. The resulting Ti3C2Tₓ electrode delivered a high specific capacitance of 322 F·g1 at a current density of 1 A·g1 and retained outstanding electrochemical stability after 30,000 galvanostatic charge-discharge cycles at 10 A·g1. These results demonstrate that Ce3+ modification is an effective strategy to enhance the performance of Ti3C2Tₓ as an anode material for 2D material-based supercapacitors.
文章引用:管朕. Ce3+离子修饰Ti3C2TX二维材料及其超级电容器性能研究[J]. 材料科学, 2026, 16(3): 100-107. https://doi.org/10.12677/ms.2026.163056

1. 引言

在全球能源转型与可持续发展的迫切需求下,清洁能源替代与高效能源存储技术已成为破解能源危机与环境问题的核心抓手随着新能源汽车、便携式电子设备及智能电网等领域的快速迭代[1]-[3],对能源存储与转换系统的性能提出了更高要求——既需要二次电池的高能量密度[4] [5],也追求超级电容器的高功率输出,同时还需兼顾长循环稳定性与环境兼容性[6]-[8]。然而,传统电极材料普遍面临瓶颈:电池类材料功率密度不足、超级电容器能量密度偏低,且电极结构易在反复充放电中失效,难以满足多场景的严苛需求[9]-[12]

作为一类关键的能量存储器件,超级电容器凭借超快充放电速率、超长循环寿命及高安全性[13] [14],在启停电源、应急储能等领域具有不可替代的作用,但低能量密度的短板严重限制了其应用边界[15]。这一核心痛点的根源在于电极材料的性能局限:传统碳基电极(如活性炭、石墨烯)主要依赖双电层电容存储电荷,容量提升空间有限[16]-[18];而过渡金属氧化物、导电聚合物等赝电容材料虽能提供更高容量,却存在导电性差、循环稳定性不足等问题[19] [20]。因此,开发兼具高比表面积、优异导电性、丰富活性位点与结构稳定性的新型电极材料,成为突破超级电容器性能瓶颈、推动其与二次电池互补协同的关键。

二维(2D)材料凭借其独特的层状结构、高比表面积与优异的电子传输特性[21],成为突破性能局限的关键方向。从石墨烯的兴起引发二维材料研究热潮,到过渡金属硫族化合物、层状氢氧化物等的深入探索,科研界持续致力于发掘兼具高导电性、丰富活性位点与结构稳定性的新型电极材料[22]。2011年MXene (无机金属碳化物、氮化物及碳氮化物)的发现,为能源材料领域带来了革命性突破[26]。作为二维材料家族的“后起之秀”,MXene通过MAX相前驱体的选择性刻蚀制备而成,兼具金属级导电性、可调谐的层间间距与丰富的表面官能团(-F、-OH、-O等),其独特的结构使其在电荷存储、离子传输与界面反应中展现出不可替代的优势[26]。尤为重要的是,MXene可通过掺杂(如N、S、P等)进一步优化电子结构、扩大层间间距并增加活性位点,显著提升其在二次电池、超级电容器及电催化等能源领域的应用潜力,成为连接高效能源存储与转换技术的核心材料之一[27]

本文对超级电容器负极材料Ti3C2Tx进行优化,通过LiF/HCl混合溶液刻蚀Ti3AlC2制备Ti3C2Tx薄膜,并经KOH预处理后引入Ce3+,在40℃下反应制备Ti3C2Tx-Ce复合薄膜。Ce3+成功嵌入Ti3C2Tx层间且元素分布均匀,复合薄膜保持规整层状结构且致密度提升,使得Ti3C2Tx-Ce在3 mol/L H2SO4电解液中表现出更优异的比电容与倍率性能,其电荷转移电阻更低,该复合薄膜在电流密度为1 A·g−1时显示出322 F·g−1的高比电容,在10 A·g−1电流密度下经30,000次循环仍保持稳定性能,为MXene基超级电容器电极材料的性能提升提供了新思路。

2. 实验部分

2.1. 试剂

实验使用主要化学试剂:碳铝钛(Ti3AlC2)、氟化锂(LiF)、氯化锂(LiCl)、盐酸(HCl)、氢氧化钾(KOH)、水和氯化铈(CeCl3 xH2O)、去离子(DI)水。

2.2. Ti3C2Tx薄膜的制备

Ti3C2Tx薄膜可通过氯化锂与氟化锂混合溶液对碳铝钛进行刻蚀制得。将1.56 g LiF粉末溶于20 mL HCl溶液中,磁力搅拌至均一透明溶液,向均匀溶液中加入1 g Ti3AlC2 粉末,40℃恒温条件下搅拌48 h,反应结束后,依次用HCl、LiCl溶液和去离子水对产物进行多次离心洗涤后,离心反复收集上清液。Ti3C2Tx分散液通过真空抽滤法在滤膜上组装成柔性Ti3C2Tx薄膜。

2.3. Ti3C2Tx-Ce薄膜的制备

配置8 M KOH溶液,取5 mL溶液与75 mg Ti3C2Tx相混合,缓慢搅拌3 h,去离子水洗涤多次后,加入25 mg CeCl3 xH2O,40℃恒温条件下均匀搅拌48 h,将所得样品经真空抽滤处理,得到柔性Ti3C2Tx-Ce薄膜。

2.4. 材料的表征和电化学测试

为分析Ti3C2Tx薄膜和Ti3C2Tx-Ce薄膜的微观形貌、化学组成以及其超级电容器性能,对其进行测试评估。

采用扫描电子显微镜(SEM,SU70,日立,日本),观察样品形貌以及片层结构;为对样品组分及晶面特征进行分析了解,采用X射线衍射仪器(XRD;D/max2600,日本)进行测试,同时,采用X射线光电子能谱(XPS)对材料表面组成、化学价态及官能团种类进行精准表征,揭示材料表面化学特性。

为评估样品电化学行为,电化学性能测试均在VMP3型电化学工作站完成。采用三电极测试体系进行测试,以Ag/AgCl作为参比电极,碳棒作为对电极,3 mol·L−1 H2SO4作为电解液。实验所用Ti3C2Tx和Ti3C2Tx-Ce薄膜均裁成1.0 × 1.0 cm2的电极片,作为超级电容器工作电极。在−0.2 V~0.8 V电压窗口内设置不同扫描速率进行循环伏安测试(CV),探究电极的氧化还原特性、电容特性及倍率性能;通过恒流充放电测试(GCD)分析不同电流密度下电极的充放电时间、比电容及循环稳定性,直观评价电极的实际放电能力与储能性能;同时,为分析材料的电化学特性和电化学阻抗(EIS),在频率范围内0.01 Hz~100 kHz,10 mV的交流电压下进行阻抗测试。

3. 结果与讨论

图1为Ti3C2Tx薄膜和Ti3C2Tx-Ce薄膜的平面及截面扫描电镜SEM图像。“图1(a)”为Ti3C2Tx薄膜的平面图像,表现出典型的少层MXene二维层状结构,片层边缘薄而平整,表明真空抽滤过程未对少层结构造成明显破坏;“图1(b)”可以观察到,片层连续堆叠,褶皱明显,表面相对平整,未观察到明显颗粒团聚,对其截面进行观察如“图1(c)”片层紧密排列,层间距均一,整体结构规整。如“图1(d)”所示,Ti3C2Tx-Ce薄膜表面出现少量不规则颗粒,这可能由于氢氧化钾的处理所引起的,如“图1(e)”所示,薄膜片层褶皱程度明显,表面较之略微粗糙,这可能是Ce颗粒附着导致。Ti3C2Tx-Ce薄膜截面如“图1(f)”所示,层状堆叠结构清晰可见,更加致密,层间距略有减小。为进一步分析Ti3C2Tx-Ce薄膜的组成分布,对样品进行EDS表征,如“图2”所示,其中可以清楚地观察到Ti、C、O和Ce四种元素均匀分布,Ce元素与在片层中均匀分布,且未破坏MXene 的二维层状结构,为材料电化学性能的提升提供了可靠的结构和成分基础。

Figure 1. (a) (b) (c) cross-sectional and Top view of SEM image of Ti3C2Tx film; (d) (e) (f) cross-sectional and Top view of SEM image of Ti3C2Tx-Ce film

1. (a) (b) (c) Ti3C2Tx平面和截面的SEM图像 (d) (e) (f) Ti3C2Tx-Ce平面和截面的SEM图像

Figure 2. EDS image of Ti3C2Tx-Ce film

2. Ti3C2Tx-Ce的EDS图像

图3(a)”为Ti3C2Tx薄膜和Ti3C2Tx-Ce薄膜的X 射线衍射谱图样,图中可以看到Ti3C2Tx薄膜的XRD图像出现这高度有序的特征峰,在6.2˚出现典型的(002)峰,经过碱处理和离子嵌入后,Ti3C2Tx-Ce薄膜的(002)峰向高角度偏移,根据布拉格公式2dsinθ = ,层间距减小,由于Ti3C2Tx经KOH处理后,K离子与其表面负电官能团之间存在静电吸引力,同时镧系金属离子独特的配位作用对层间结构进行了调整,所以层间距发生减小,片层之间的电子耦合增强,电导率提高。同时也表明Ce3+离子的成功嵌入,在静电力的作用下,层间距发生变化。“图3(b)”为Ti3C2Tx薄膜和Ti3C2Tx-Ce薄膜的高分辨X射线光电子能谱(XPS)。Ti3C2Tx薄膜检测到了Ti、C、O、F、Cl元素,其中F元素和Cl元素来自刻蚀过程中残留的端基,O 1s来自羟基或表面氧化,Ti3C2Tx-Ce薄膜出现明显的Ce 3d特征峰,证明Ce元素已经成功引入到Ti3C2Tx中。

Figure 3. (a) XRD pattern and (b) High resolution spectrum of Ti3C2Tx-Ce

3. Ti3C2Tx和Ti3C2Tx-Ce的 (a) XRD图谱和 (b) 高分辨率XPS图谱

Figure 4. (a) Specific capacitance versus at different current densities of Ti3C2Tx- and Ti3C2Tx-Ce samples prepared in different proportions (b) (c) CV curves and GCD curves of Ti3C2Tx (d) (e) CV curves and GCD curves of Ti3C2Tx-Ce (f) EIS spectrums and (g) cycling performance of Ti3C2Tx-Ce electrodes at a current density of 10 A·g−1

4. (a) Ti3C2Tx和Ti3C2Tx-Ce不同电流密度下的比电容对比关系 (b) (c) Ti3C2Tx 电极的CV曲线和GCD曲线 (d) (e) Ti3C2Tx-Ce 电极的CV曲线和GCD曲线Ti3C2Tx-Ce (f) EIS谱

在3 mol·L−1 H2SO4电解液中对样品Ti3C2Tx薄膜和Ti3C2Tx-Ce薄膜电化学性能进行评估。“图4(a)”为Ti3C2Tx薄膜和Ti3C2Tx-Ce薄膜在不同电流密度下的比电容曲线,在不同电流密度下Ti3C2Tx-Ce比电容明显高于Ti3C2Tx,随着电流密度的增大,Ti3C2Tx-Ce比电容衰减更加平缓,表现出优异的倍率性能。证明Ce3+离子的嵌入使材料的电容性能得到显著提升。“图4(b)”为Ti3C2Tx在不同扫速下的循环伏安特性曲线,在−0.2 V~0.6 V的电位范围内,Ti3C2Tx薄膜在−0.4 V和0 V出有一对氧化还原峰,证明其为赝电容电荷存储机制。“图4(d)”为Ti3C2Tx-Ce薄膜在不同扫速下的伏安特性曲线,其CV面积明显大于Ti3C2Tx薄膜,并表现出明显的氧化还原峰,表明Ce的嵌入使材料性能更加优异。“图4(c)”Ti3C2T薄膜的GCD曲线,呈现近似对称的三角形,Ti3C2Tx-Ce薄膜的充放电曲线对称性以及放电时间如“图4(e)”明显优于Ti3C2Tx薄膜,有着更高的比电容,并且在大电流密度下仍能保持良好的对称性,进一步证明了优异的倍率性能。

在0.01 Hz~100 kHz的频率范围内进行EIS测试和分析,“如图4(f)”,可以观察到Ti3C2Tx-Ce薄膜的半圆直径明显小于Ti3C2Tx薄膜,说明其电荷转移电阻更低,电荷转移动力学更优。对Ti3C2Tx-Ce薄膜进行30,000次循环的GCD测试,如图5所示,循环多次后,Ti3C2Tx-Ce薄膜仍保持着稳定的倍率性能,证明Ce的引入大大提高了Ti3C2Tx薄膜的倍率性能。

Figure 5. (g) Cycling performance of Ti3C2Tx-Ce electrodes at a current density of 10 A·g−1

5. (g) Ti3C2Tx-Ce电极在10 A·g−1下的循环性能

4. 结论

综上所述,通过离子交换,实现了金属离子Ce3+对Ti3C2Tx薄膜的修饰,使得Ti3C2Tx-Ce电极材料在强酸条件下,电流密度1 A·g−1时显示出322 F·g−1的高比电容,高电流密度下仍然保持稳定的比容量,经多次循环后,仍然保持着优异的倍率性能,证明通过离子调控,能够使材料倍率性能获得提升,为MXene 基超级电容器电极材料的性能提升提供了新思路。

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