基于太赫兹波段光子晶体温度传感器

Photonic Crystal Temperature Sensors Based on the Terahertz Band

摘要: 本文主要在太赫兹波段研究了一种有缺陷的一维光子晶体热传感器，它由高电阻率硅、甘油和二氧化硅构成。基于传递矩阵法，利用MATLAB软件分析了该传感器的传输特性。通过利用一维光子晶体的光子禁带性质和甘油的热光效应来提高光子晶体对温度变化的灵敏度。为此，我们进行了理论建模和数值模拟研究，通过优化缺陷层的厚度，提升传感器的灵敏度。这项工作的核心是监测传感器的透射光谱随温度变化的偏移情况，并以此作为评估其性能的关键依据。此外，我们还详细讨论了缺陷层的厚度和入射角对传感器灵敏度的影响。结果表明，在入射角为20˚时，传感器的灵敏度高达78.37 nm/℃；而当缺陷层厚度调整为200 μm时，品质因数达到6345。

Abstract: This paper primarily studies a defective one-dimensional photonic crystal thermal sensor in the terahertz waveband, composed of high-resistivity silicon, glycerol, and silicon dioxide. Using the transfer matrix method and MATLAB software, the transmission characteristics of the sensor were analyzed. By leveraging the photonic bandgap properties of the one-dimensional photonic crystal and the thermo-optic effect of glycerol, the sensitivity of the photonic crystal to temperature changes was enhanced. To achieve this, we conducted theoretical modeling and numerical simulation studies and optimized the thickness of the defect layer to improve the sensor’s sensitivity. The core of this work is to monitor the shift of the sensor’s transmission peak with temperature changes, using this as a key criterion for evaluating its performance. Additionally, the effects of defect layer thickness and incident angle on the sensor’s sensitivity were discussed in detail. The results show that at an incident angle of 20˚, the sensor’s sensitivity reaches 78.37 nm/˚C; and when the defect layer thickness is adjusted to 200 μm, the quality factor reaches 6345.