IGBT参数建模与仿真分析
The Parametric Model and Simulation Analysis of IGBT
DOI: 10.12677/CSA.2014.47019, PDF,   
作者: 耿 涛, 曹文明：河南大学物理与电子学院，开封
关键词: 绝缘栅型晶体管(IGBT)；故障检测；寿命；可靠性；IGBT Module； Fault Detection； Lifetime； Reliability
摘要: 本论文首先在对IGBT的结构，工作原理以及特性进行深入分析的基础上，利用matlab/simulink软件搭建IGBT的简化模型；其次对IGBT失效问题进行理论分析，分别从IGBT失效因素，失效机理等方面进行深入分析、总结与探讨；再次根据仿真结果验证由于IGBT工作环境等因素影响使其不断受到电热冲击，导致模块内部键合线发生蠕动，芯片内部产生疲劳裂痕，最终导致失效的结论，从而建立起能够预测IGBT寿命的模型。
Abstract: In this paper, based on the analysis of the structure and work principle and characteristics of IGBT, the simplified model of IGBT by matlab/simulink is built. The problems of the IGBT failure are analyzed theoretically from the perspectives of IGBT failure factors and failure mechanism, re-spectively. According to simulation results, it was verified that IGBT is subjected to constant electric shocks due to work environment, etc., then, module internal bonding wire begins to creep and fatigue cracks occur, which eventually lead to failure. Thus, the model can be used to predict the lifetime of the IGBT.
文章引用：耿涛, 曹文明. IGBT参数建模与仿真分析[J]. 计算机科学与应用, 2014, 4(7): 125-134. https://dx.doi.org/10.12677/CSA.2014.47019

参考文献

[1] 陈永淑 (2010) IGBT的可靠性模型研究. 硕士学位论文, 重庆大学, 重庆.
[2] 王兆安 (2009) 电力电子技术. 机械工业出版社, 西安, 27-36.
[3] Patil, N., Das, D., Goebel, K. and Pecht, M. (2009) Precursor parameter identifi-cation for insulated gate bipolar transistor prognostics. IEEE Transactions on Industrial Electronics, 58, 271-276.
[4] Zhou, L.W. and Zhou, S.Q. (2010) Effects of wire-bond lift-off on gate circuit of IGBT power modules. 14th International Power Electronics and Motion Control Conference, Ohrid, 6-8 September 2010, 45-47.
[5] Khong, B., Legros, M., Tounsi, P., Dupuy, Ph., Chauffeur, X., Levade, C., Vanderschaeve, G. and Scheid, E. (2007) Cha- racterization and modeling of ageing failures on power MOSFET devices. Microelectronics Reliability, 47, 1735-1740.
[6] Patil, N., Das, D., Goebel, K. and Pecht, M. (2008) Identification of failure precursor parameters for Insulated Gate Bipolar Transistors (IGBTs). Proceeding of the 1st International Conference on Prognostic and Health Management, Denver, 6-9 October 2008, 1-5.
[7] Xiong, Y.L., Cheng, X., Shen, J. and Mi, C. (2008) Prognostic and warming system for power-electronic modules in electric, hybrid electric, and fuel-cell vehicles. IEEE Transactions on Industrial Electronics, 55, 2268-2276.
[8] Rodríguez-Blanco, M.A., Claudio-Sánchez, A., Theilliol, D. and Ve-la-Valdés, L.G. (2001) A failure-detection strategy for IGBT based on gate-voltage behavior applied to the motor drive system. IEEE Transactions on Industrial Electronics, 58, 1625-1633.
[9] Lu, H., Bailey, C. and Yin, C.Y. (2009) Design for reliability of power electronics modules. Microelectronics Reliability, 49, 1250-1255.
[10] Hefener, A.R. (2002) Analytical modeling of device-circuit interactions for power insulated gate bipolar transistor (IGBT). IEEE Transactions on Industry Application, 26, 995-1005.
[11] Jacob, P., Held, M., Scacco, P. and Wu, W. (1995) Reliabilty testing and analysis of IGBT power semiconductor modules. IEE Colloquium on IGBT Propulsion Drives, London, 25 April 1995, 440-445.