分子束外延生长单层到双层的TiSe2
Molecular Beam Epitaxy Growth of Monolayer to Bilayer TiSe2
摘要: TiSe2中电荷密度波的起源因其复杂的能带结构和多体相互作用而长期存在争议，层间耦合效应的干扰使得本征机制难以厘清。本文采用了一种结合衬底工程、分子束外延生长与原位表征的研究策略：首先通过闪烧碳化硅技术成功实现了6H-SiC衬底上双层石墨烯的外延生长，利用扫描隧道显微镜确认了石墨烯的平整度与层数均匀性，获得理想的惰性衬底；随后在该石墨烯衬底上利用分子束外延可控生长了高质量的单层及双层TiSe2薄膜，并通过扫描隧道显微镜对其生长形貌和电子态进行了原位表征。这一制备路线构建了研究TiSe2电荷密度波起源的理想二维平台。
Abstract: The origin of charge density wave in TiSe2 has long been controversial due to its complex band structure and many-body interaction. The interference of interlayer coupling effect makes it difficult to clarify the intrinsic mechanism. In this paper, a research strategy combining substrate engineering, molecular beam epitaxy growth and in-situ characterization is adopted. Firstly, the epitaxial growth of double-layer graphene on 6H-SiC substrate was successfully realized by flash-fired silicon carbide technology. The flatness and layer uniformity of graphene were confirmed by scanning tunneling microscopy, and the ideal inert substrate was obtained. Subsequently, high-quality single-layer and double-layer TiSe2 films were grown on the graphene substrate by molecular beam epitaxy, and their growth morphology and electronic state were characterized in situ by scanning tunneling microscopy. This preparation route constructs an ideal two-dimensional platform for studying the origin of charge density wave in TiSe2.
文章引用：王孟玮. 分子束外延生长单层到双层的TiSe2[J]. 材料科学, 2026, 16(4): 257-263. https://doi.org/10.12677/ms.2026.164092

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