InGaAsSb/AlGaAsSb量子阱激光器性能的仿真优化研究
Simulation Optimization of the Performance of InGaAsSb/AlGaAsSb Quantum Well Lasers
DOI: 10.12677/japc.2026.152009, PDF,   
作者: 周靖涵, 王登魁*, 房 丹, 王 勇, 方 铉：长春理工大学，高功率半导体激光国家重点实验室，吉林 长春；李承林, 方正君*：安徽光智科技有限公司，安徽 滁州
关键词: InGaAsSb/AlGaAsSb量子阱；接触层掺杂浓度；量子阱厚度；上限制层Al组分；InGaAsSb/AlGaAsSb Quantum Well； Contact Layer Doping Concentration； Quantum Well Thickness； Al Composition in Upper Cladding Layer
摘要: 2 μm波段作为重要的大气窗口，是诸多领域核心光电器件的工作波段，该波段的激光器主要采用InGaAsSb/AlGaAsSb的量子阱结构。本文通过仿真技术系统地研究了InGaAsSb/AlGaAsSb量子阱激光器关键参数对器件性能的影响，包括接触层掺杂浓度、量子阱厚度、上限制层Al组分。结果表明：接触层掺杂浓度为5 × 1018 cm−3时，可在增强载流子约束能力与维持光场分布之间实现最优平衡；量子阱厚度为10 nm时，能够获得良好的光学增益，避免过薄量子阱引发的载流子泄漏；上限制层Al组分较低时，有助于提升辐射复合效率。本研究为高性能锑化物中红外激光器的结构设计与性能优化提供了理论依据。
Abstract: The 2 μm waveband serves as a critical atmospheric window and represents the operating waveband for core optoelectronic devices in numerous fields. Lasers operating within this band predominantly adopt the InGaAsSb/AlGaAsSb quantum well structure. This study systematically investigates the influences of key parameters on the device performance of InGaAsSb/AlGaAsSb quantum well lasers via simulation, including doping concentration of the contact layer, quantum well thickness, and Al composition in the upper cladding layer. The results show that a contact layer doping concentration of 5 × 1018 cm−3 achieves the optimal balance between enhancing carrier confinement and maintaining optical field distribution. A quantum well thickness of 10 nm yields favorable optical gain while avoiding carrier leakage caused by overly thin quantum wells. A lower Al composition in the upper cladding layer contributes to improved radiative recombination efficiency. This work provides a theoretical basis for the structural design and performance optimization of high-performance antimonide mid-infrared lasers.
文章引用：周靖涵, 王登魁, 李承林, 方正君, 房丹, 王勇, 方铉. InGaAsSb/AlGaAsSb量子阱激光器性能的仿真优化研究[J]. 物理化学进展, 2026, 15(2): 82-90. https://doi.org/10.12677/japc.2026.152009

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