退火对原子层沉积W/Al2O3纳米薄膜形貌与电学性能的影响
Effect of Annealing Conditions on the Morphology and Electrical Properties of Atomic Layer Deposited W/Al2O3 Nanofilms
摘要: 在氮气气氛下对原子层沉积法制备的W/Al2O3薄膜进行了退火处理，利用高阻测试仪、扫描电子显微镜及能量色散X射线谱对薄膜进行表征，研究了退火对薄膜电学性能及形貌的影响。结果表明，在1 h退火时间下，400℃~600℃退火不仅使薄膜方块电阻数值明显降低，而且随退火温度升高呈持续下降趋势，当退火温度上升至700℃~800℃时，方块电阻偏离下降趋势，出现了明显上升趋势；当退火时间延长至2 h时，薄膜在400℃~500℃条件下仍保持下降趋势，但在600℃条件下方块电阻出现明显跃升。SEM与EDS结果表明，电学异常与薄膜表面连续性下降密切相关。
Abstract: The W/Al₂O₃ thin films deposited by atomic layer deposition (ALD) were annealed in a nitrogen atmosphere and characterized by a high-resistance meter, scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDS) to investigate the effects of annealing on their electrical properties and surface morphology. The results show that under a 1 h annealing duration, annealing at 400˚C~600˚C not only significantly reduced the sheet resistance of the films but also led to a continuous decrease with increasing temperature; however, when the annealing temperature increased to 700˚C~800˚C, the sheet resistance deviated from the decreasing trend and exhibited a pronounced increase. When the annealing time was extended to 2 h, the films maintained a decreasing trend in sheet resistance at 400˚C~500˚C, whereas a marked increase in sheet resistance was observed at 600˚C. SEM and EDS analyses indicate that the electrical anomalies are closely correlated with the degradation of surface continuity in the films.
文章引用：高管哗, 王国政, 蒋恩桐, 王天昊. 退火对原子层沉积W/Al2O3纳米薄膜形貌与电学性能的影响[J]. 物理化学进展, 2026, 15(2): 110-121. https://doi.org/10.12677/japc.2026.152012

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