通过一次输运生长得到不同晶相TaS2单晶
TaS2 Single Crystals with Different Crystalline Phases Were Obtained through a Single Transport Growth Process
DOI: 10.12677/ms.2026.168173, PDF,    科研立项经费支持
作者: 刘广富, 王璟璇, 吴传易, 陈 晨*：浙江师范大学物理与电子信息工程学院、浙江光电子研究院，浙江 金华；韩 佳：上海大学材料基因组工程研究院，上海；陈 飞*：浙江师范大学物理与电子信息工程学院、浙江光电子研究院，浙江 金华；上海大学材料基因组工程研究院，上海
关键词: TaS2；不同晶相；淬火；TaS2； Different Crystalline Phases； Quenching
摘要: TaS2作为典型的电荷密度波材料随着其晶体结构改变会呈现出丰富的物性，但不同结构的TaS2生长方法及获得方式有所不同。在使用化学气相输运法生长时，对于一次输运就可以获得不同晶相TaS2的研究仍然匮乏。本文采用化学气相输运法成功制备了TaS2单晶，并通过对生长端(低温端)在不同温度下进行淬火及炉冷处理，获得了不同晶相的TaS2单晶。在800℃淬火条件下获得1T相的TaS2；在500℃淬火时则得到6R相的TaS2，在炉冷时得到2H相的TaS2。本研究不仅为理解TaS2物性提供了新的实验视角，也为一次性生长出不同相的TaS2提供了实验方案。
Abstract: TaS2, as a typical charge density wave material, exhibits rich physical properties depending on its crystal structure. However, the growth methods and acquisition mechanisms for TaS2 with different structures vary. Research on obtaining different crystalline phases of TaS2 in a single transport phase using the chemical vapor deposition (CVD) method remains scarce. This paper successfully prepared TaS2 single crystals using the CVD method and obtained TaS2 single crystals with different crystalline phases by quenching and furnace cooling the growth end (low-temperature end) at different temperatures. Quenching at 800˚C yielded the 1T phase TaS2; quenching at 500˚C yielded the 6R phase TaS2; and furnace cooling yielded the 2H phase TaS2. This study not only provides a new experimental perspective for understanding the physical properties of TaS2 but also provides an experimental scheme for growing different phases of TaS2 in a single process.
文章引用：刘广富, 王璟璇, 韩佳, 吴传易, 陈晨, 陈飞. 通过一次输运生长得到不同晶相TaS2单晶[J]. 材料科学, 2026, 16(8): 43-51. https://doi.org/10.12677/ms.2026.168173

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