基于AI场景生成技术的理论教学改革研究

Research on the Reform of Theoretical Teaching Based on AI Scenario Generation Technology

摘要: 以半导体晶体管、场效应管和氮化镓导电机理为例研究了基于AI场景生成技术的理论教学改革方法。通过案例探讨了第一代晶体管到当前的发展历程。紧扣产业发展的关键技术选择，深刻剖析了双极型晶体管、MOS管的导电原理。提出了符合产业实际的双极型晶体管、MOS管电路模型。文章研究了电子技术理论课程内容和产业发展融合的改革方法，借助生成式AI技术将产业发展面临的技术问题和解决方案栩栩如生地展示出来。通过深入研究第一代晶体管至MOS管，再到氮化镓半导体的产业发展历程，用AI生成技术展现了半导体产业发展的技术选择。本文的研究成果为电子技术的课程内容改革提供了范例。

Abstract: This study investigates a reform method for theoretical teaching by leveraging AI scenario generation technology, focusing on the conduction mechanisms of semiconductor transistors, field-effect transistors (FETs), and gallium nitride (GaN) devices. Through representative cases, it reviews the developmental trajectory from first-generation bipolar junction transistors to contemporary semiconductor technologies. Aligned with key technologies critical to industrial advancement, the paper provides an in-depth analysis of the conduction principles of transistors and MOSFETs, and proposes transistor and MOSFET circuit models that reflect real-world industrial practices. Furthermore, it explores strategies for integrating electronic technology curricula with industry development. By employing generative AI, complex technical challenges and corresponding solutions in the semiconductor industry are vividly visualized and reconstructed. Through a detailed examination of the evolution from early transistors to MOS structures and subsequently to GaN semiconductors, AI-generated scenarios effectively illustrate the pivotal technological choices shaping the semiconductor industry. The findings of this research offer a practical paradigm for curriculum reform in electronic technology education.