单质铜颗粒掺杂的氧化亚铜复合薄膜制备及物性研究

Fabrication and Physical Properties of Cu₂O:Cu Composite Thin Films

摘要: 本文采用脉冲激光沉积法成功制备出，Cu₂O:Cu复合薄膜，Cu₂O薄膜。结果表明在600℃时易获得纯Cu₂O薄膜，当温度升高到700℃时，会有铜单质的出现，并通过X射线衍射(XRD)，原子力显微镜(AFM)，扫描电子显微镜(SEM)，探究了薄膜的生长取向和表面形貌，在STO (001)基底上，Cu₂O生长取向为(002)，Cu为(022)。同时利用透射电子显微镜测试了薄膜的微结构，但由于Cu颗粒或团簇尺寸太小，并不能直接被观察到。薄膜的光吸收测试表明，这种颗粒掺杂的复合薄膜较纯Cu₂O薄膜，在部分波段具有更高的吸收系数。

Abstract: Pulsed deposition method (PLD) was successfully used in the manufacture of Cu₂O and Cu₂O:Cu composite thin films. The results showed that we could obtain the pure Cu₂O film at 600˚C, and that the elemental copper particles occurred when the temperature rose to 700˚C. In addition, X-ray diffraction, atomic force microscopy and scanning electron microscope were used in the research of growth orientation and surface topography. The orientation between film and substrate is STO(001)//Cu₂O(002)//Cu(002). Also the microstructure of the composite film was tested by transmission electron microscopy, but Cu particles or clusters’ size were too small; so we could hardly observe them directly. The absorption coefficient of the particles doped composite film is higher than the pure Cu₂O film during some wavelength.