具有量子尺寸表面的硅纳米线光电极制备及其光电化学性能研究
Fabrication and Photoelectrochemical Performance of Si Nanowire Photoelectrode Structured with Quantum Size Surface
DOI: 10.12677/AEP.2017.73B002, PDF,   
作者: 于师懿, 于洪涛*：大连理工大学环境学院，辽宁 大连
关键词: 光电催化；量子尺寸；多级硅；Photoelectrocatalysis； Quantum Size； Hierarchical Si
摘要:

硅材料在光催化领域优势明显，但稳定性较差，在潮湿空气及水溶液中易被氧化，表面形成不导电的二氧化硅层。通过对硅纳米线进行二次刻蚀，在纳米线表面形成量子点和纳米孔，可以有效稳定纳米线，且对一次刻蚀3min的纳米线优化效果最明显，循环伏安扫描20圈后，电流降幅从34%降至1.8%，光电流增致原来的4倍，吸光度也有明显增加。 S

ilicon semiconductor material has strong competitive in photocatalytic, but it is unstable in moist environment and aqueous solution as oxidized to insulative silicon dioxide on the surface. After the second etch on Si nanowires, quantum dots and nanopores are formed on most part of the surface which can stabilize the Si nanowires efficiently, and the hierarchical Si etched for 3 minutes on the first etch shows the best performance. Cyclic voltammetry measurements under xenon lamp irradiation demonstrates the current decline proportion fall off from 34% to 1.8% after 20 cycles, and the photocurrent raise to 4 times comparing with the original smooth nanowires, meanwhile, absorbancy rises obviously.

文章引用：于师懿, 于洪涛. 具有量子尺寸表面的硅纳米线光电极制备及其光电化学性能研究[J]. 环境保护前沿, 2017, 7(3): 10-17. https://doi.org/10.12677/AEP.2017.73B002

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