2~5 μm中红外波段GaSb半导体材料研究进展
Research Progress of 2 - 5 μm Mid-Infrared GaSb Semiconductor Materials
DOI: 10.12677/APP.2018.81007, PDF,  被引量    国家自然科学基金支持
作者: 余 沛, 房 丹*, 唐吉龙, 方 铉, 王登魁, 王新伟, 王晓华, 魏志鹏：长春理工大学高功率半导体激光国家重点实验室，吉林 长春
关键词: 锑化镓；I型量子阱；W型量子阱；分子束外延；GaSb； Type-I Quantum Well； Type-W Quantum Well； MBE
摘要: III-V族半导体材料因其光电子应用中的优势而备受关注。这些材料中，GaSb和GaSb相关半导体材料因具有高的载流子迁移率和较窄的禁带宽度而被认为是中红外波段光电子半导体器件的首选材料。然而，半导体光电子器件的性能强烈依赖于材料的结构和光学性质，所以GaSb材料的研究工作重点是如何提高晶体质量，精确调整合金组分，提高发光性能等。本文对2~5 μm GaSb和GaSb相关半导体材料的外延生长和材料性质的研究进展做出了简要的概述，主要讨论了GaSb材料、GaSb合金薄膜材料以及GaSb基量子阱材料的外延生长过程及材料性质，以期获得GaSb基半导体材料外延生长的最优条件。
Abstract: III-V group semiconductors have received a great deal of attention because of their potential ad-vantages for use in optoelectronic and electronic applications. Among these materials, with characteristics that include high carrier mobility and a narrow band gap, gallium antimonide (GaSb) and GaSb-related semiconductors have been recognized as most suitable candidates for high-per- formance optoelectronics in the mid-infrared range. The performance of semiconductor devices, however, strongly dependent on the structure and optical properties of materials, so the GaSb materials research focus is to improve the quality of crystal, adjust the alloy composition, improve the luminous performance, etc. In this paper, the progress of epitaxial growth and material properties of 2 - 5 μm GaSb and GaSb-related semiconductor materials are briefly reviewed. The epitaxial growth processes and material properties of GaSb, GaSb related alloy materials and GaSb- based quantum well materials are discussed in order to obtain the optimal conditions for epitaxial growth of GaSb-based semiconductor materials.
文章引用：余沛, 房丹, 唐吉龙, 方铉, 王登魁, 王新伟, 王晓华, 魏志鹏. 2~5 μm中红外波段GaSb半导体材料研究进展[J]. 应用物理, 2018, 8(1): 45-61. https://doi.org/10.12677/APP.2018.81007

参考文献

[1] Borg, B.M. and Wernersson, L.E. (2013) Synthesis and Properties of Antimonies Nanowires. Nanotechnology, 24, 202001. [Google Scholar] [CrossRef] [PubMed]
[2] Cui, Q., Yang, Y., Li, J., et al. (2017) Material and Device Architecture Engineering toward High Performance Two- Dimensional (2D) Photodetectors. Crystals, 7, 149. [Google Scholar] [CrossRef] 
[3] Chen, H., Liu, H., Zhang, Z., et al. (2016) Nanostructured Photodetectors: From Ultraviolet to Terahertz. Advanced Materials, 28, 403-433. [Google Scholar] [CrossRef] [PubMed]
[4] Zhang, Y., Wu, J., Aagesen, M., et al. (2015) III-V Nanowires and Nanowire Optoelectronic Devices. Journal of Physics D: Applied Physics, 48, 463001. [Google Scholar] [CrossRef] 
[5] Li, L., Pan, D., Xue, Y., et al. (2017) Near Full-Composition-Range High-Quality GaAs1-xSbx Nanowires Grown by Molecular-Beam Epitaxy. Nano Letters, 17, 622-630. [Google Scholar] [CrossRef] [PubMed]
[6] Noh, Y.K., Hwang, Y.J., Kim, M.D., et al. (2007) Structural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates. Journal of the Korean Physical Society, 50, 1929.
[7] La Pierre, R.R., Robson, M., Azizur-Rahman, K.M., et al. (2017) A Review of III-V Nanowire Infrared Photodetectors and Sensors. Journal of Physics D: Applied Physics, 50, 123001. [Google Scholar] [CrossRef] 
[8] Dutta, P.S., Bhat, H.L. and Kumar, V. (1997) The Physics and Technology of Gallium Antimonide: An Emerging Optoelectronic Material. Applied Physics, 81, 5821-5870. [Google Scholar] [CrossRef] 
[9] Johnson, G.R., Cavenett, B.C., Kerr T M, et al. (1988) Optical, Hall and Cyclotron Resonance Measurements of GaSb Grown by Molecular Beam Epitaxy. Semiconductor Science and Technology, 3, 1157. [Google Scholar] [CrossRef] 
[10] Vurgaftman, I., Meyer, J.R. and Ram-Mohan, L.R. (2001) Band Parameters for III-V Compound Semiconductors and Their Alloys. Applied Physics, 89, 5815-5875. [Google Scholar] [CrossRef] 
[11] Dutta, P.S., Rao, K.S.R.K., Bhat, H.L., et al. (1995) Surface Morphology, Electrical and Optical Properties of Gallium Antimonide Layers Grown by Liquid Phase Epitaxy. Journal of Crystal Growth, 152, 14-20. [Google Scholar] [CrossRef] 
[12] Dutta, P.S., Bhat, H.L. and Kumar, V. (1995) Liquid Phase Epitaxial Growth of Pure and Doped GaSb Layers: Morphological Evolution and Native Defects. Bulletin of Materials Science, 18, 865-874. [Google Scholar] [CrossRef] 
[13] Jakowetz, W., Rühle, W., Breuninger, K., et al. (1972) Luminescence and Photoconductivity of Undoped p-GaSb. Physica Status Solidi, 12, 169-174.
[14] Shin, J., Verma, A., Stringfellow, G.B., et al. (1972) Growth of GaSb using Tris(dimethylamido)antimony. Journal of Crystal Growth, 151, 1-8. [Google Scholar] [CrossRef] 
[15] Chang, L.L. and Ploog, K. (1985) Molecular Beam Epitaxy and Heterostructures. Springer, Berlin. [Google Scholar] [CrossRef] 
[16] Wieder, H.H. and Clawson, A.R. (1973) Photo-Electronic Properties of InAs0.07Sb0.93 Films. Thin Solid Films, 15, 217-221. [Google Scholar] [CrossRef] 
[17] Miyoshi, H. and Horikoshi, Y. (2001) Substrate Lattice Constant Effect on the Miscibility Gap of MBE Grown InAsSb. Journal of Crystal Growth, 227, 571-576. [Google Scholar] [CrossRef] 
[18] Chou, C.Y., Torfi, A. and Wang, W.I. (2013) Improvement of GaAsSb Alloys on InP Grown by Molecular Beam Epitaxy with Substrate Tilting. Journal of Applied Physics, 114, Article ID: 153111. [Google Scholar] [CrossRef] 
[19] Gao, X., Wei, Z.P., Zhao, F., et al. (2016) Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy. Scientific Reports, 6, Article No. 29112. [Google Scholar] [CrossRef] [PubMed]
[20] Garbuzov, D.Z., Martinelli, R.U., Lee, H., et al. (1997) 4 W Quasi-Continuous-Wave Output Power from 2 μm AlGaAsSb/InGaAsSb Single-Quantum-Well Broadened Waveguide Laser Diodes. Applied Physics Letters, 70, 2931- 2933. [Google Scholar] [CrossRef] 
[21] Karouta, F., Mani, H., Bhan, J., et al. (1987) Croissance par épitaxieen phase liquide et caractérisation d’alliages Ga1−xInxAsySb1−y à paramètre de mailleaccordé sur celui de GaSb. Revue de Physique Appliquée, 22, 1459-1467. [Google Scholar] [CrossRef] 
[22] Craig, A.P., Jain, M., Wicks, G., et al. (2015) Short-Wave Infrared Barriode Detectors using InGaAsSb Absorption Material Lattice Matched to GaSb. Applied Physics Letters, 106, Article ID: 201103. [Google Scholar] [CrossRef] 
[23] Adachi, S. (1987) Band Gaps and Refractive Indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key Properties for a Variety of the 2-4 μm Optoelectronic Device Applications. Journal of Applied Physics, 61, 4869-4876. [Google Scholar] [CrossRef] 
[24] Ait, K.H., Boukredimi, D. and Mebarki, M. (1997) Band Discontinuities of Perfectly Lattice-Matched GaSb(n)/ GaAlAsSb(p)/GaSb(p) Double Heterojunction. Physica Status Solidi, 163, 101-106.
[25] Jasik, A., Kubacka-Traczyk, J., Regiński, K., et al. (2011) Method of Determination of AlGaAsSb Layer Composition in Molecular Beam Epitaxy Processes with Regard to Unintentional as Incorporation. Journal of Applied Physics, 110, Article ID: 073509. [Google Scholar] [CrossRef] 
[26] Keyes, R.J. and Quist, T.M. (1962) Recombination Radiation Emitted by Gallium Arsenide. Proceedings of the IRE, 50, 1822-1823.
[27] Nathan, M.I., Dumke, W.P., Burns, G., et al. (1962) Stimulated Emission of Radiation from GaAs p-n Junctions. Applied Physics Letters, 1, 62-64. [Google Scholar] [CrossRef] 
[28] Quist, T.M., Rediker, R.H., Keyes, R.J., et al. (1962) Semiconductor Master of GaAs. Applied Physics Letters, 1, 91-92. [Google Scholar] [CrossRef] 
[29] Panish, M., Hayashi, I. and Sumski, S. (1969) A Technique for the Preparation of Low-Threshold Room-Temperature GaAs Laser Diode Structures. Quantum Electronics, 5, 210-211. [Google Scholar] [CrossRef] 
[30] Alferov, Z.I., Andreev, V.M., Portnoi, E.L., et al. (1970) AlAs-GaAs Heterojunction Injection Lasers with a Low Room-Temperature Threshold. Soviet Physics Semiconductors, 3, 1107-1110.
[31] Panish, M.B., Hayashi, I. and Sumski, S. (1970) Double-Heterosture Injection Lasers with Room Temperature Thresholds as Low as 2300 A/cm2. Applied Physics Letters, 16, 326-327. [Google Scholar] [CrossRef] 
[32] Hasan, M.M., Islam, M.R. and Teramoto, K. (2012) Crystallographic Orientation-Dependent Optical Properties of GaInSb Mid-Infrared Quantum Well Laser. Optik—International Journal for Light and Electron Optics, 123, 1993- 1997. [Google Scholar] [CrossRef] 
[33] Mourad, C., Gianardi, D., Malloy, K.J., et al. (2000) 2 μm GaInAsSb/AlGaAsSb Mid-Infrared Laser Grown Digitally on GaSb by Modulated-Molecular Beam Epitaxy. Journal of Applied Physics, 88, 5543-5546. [Google Scholar] [CrossRef] 
[34] Li, W., HÉ, J.B., et al. (2004) Strain-Compensated InGaAsSb/AlGaAsSb Mid-Infrared Quantum-Well Lasers. Applied Physics Letters, 84, 2016-2018. [Google Scholar] [CrossRef] 
[35] Rodriguez, J.B., Cerutti, L. and Tournié, E. (2009) GaSb-Based, 2.2 μm Type-I Laser Fabricated on GaAs Substrate Operating Continuous Wave at Room Temperature. Applied Physics Letters, 94, Article ID: 023506. [Google Scholar] [CrossRef] 
[36] Lin, C.H. and Lee, C.P. (2014) Enhanced Optical Property in Quaternary GaInAsSb/AlGaAsSb Quantum Wells. Journal of Applied Physics, 116, Article ID: 153504. [Google Scholar] [CrossRef] 
[37] Xing, J., Zhang, Y., Xu, Y., et al. (2014) High Quality above 3 μm Mid-Infrared InGaAsSb/AIGaInAsSb Multiple-Quantum Well Grown by Molecular Beam Epitaxy. Chinese Physics B, 23, 454-457. [Google Scholar] [CrossRef] 
[38] Xing, J.L., Zhang, Y., Liao, Y.P., et al. (2014) Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density. Chinese Physics Letters, 31, Article ID: 054204. [Google Scholar] [CrossRef] 
[39] Sifferman, S.D., Nair, H.P., Salas, R., et al. (2015) Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb. IEEE Journal of Selected Topics in Quantum Electronics, 21, 248-257. [Google Scholar] [CrossRef] 
[40] Vinnichenko, M.Y., Makhov, I.S., Selivanov, A.V., et al. (2016) Effect of Auger Recombination on Non-Equilibrium Charge Carrier Concentration in InGaAsSb/AlGaAsSb Quantum Wells. St Petersburg Polytechnical University Journal Physics & Mathematics, 2, 287-293. [Google Scholar] [CrossRef] 
[41] Vinnichenko, M.Y., Makhov, I.S., Selivanov, A.V., et al. (2017) Photoluminescence in InGaAsSb/AlGaAsSb Quantum Wells: Impact of Nonradiative Recombination. Journal of Physics: Conference Series, 816, Article ID: 012017.
[42] Vinnichenko, M.Y., Makhov, I.S., Balagula, R., et al. (2017) The Effect of Auger Recombination on the Nonequilibrium Carrier Recombination Rate in the InGaAsSb/AlGaAsSb Quantum Wells. Superlattices& Microstructures, 109, 743-749. [Google Scholar] [CrossRef] 
[43] Janiak, F., Seek, G., Motyka, M., Ryczko, K., Misiewicz, J., Bauer, A., Höfling, S., Kamp, M. and Forchel, A. (2012) Increasing the Optical Transition Oscillator Strength in GaSb-Based Type II Quantum Wells. Applied Physics Letters, 100, Article ID: 231908. [Google Scholar] [CrossRef] 
[44] Ryczko, K., Seek, G. and Misiewicz, J. (2013) Eight-Band k p Modeling of InAs/InGaAsSb Type-II W-Design Quantum Well Structures for Interband Cascade Lasers Emitting in a Broad Range of Mid Infrared. Journal of Applied Physics, 114, Article ID: 223519. [Google Scholar] [CrossRef] 
[45] Bewley, W.W., Lindle, J.R., Kim, C.S., Kim, M., Canedy, C.L., Vurgaftman, I. and Meyer, J.R. (2008) Lifetimes and Auger Coefficients in Type-II W Interband Cascade Lasers. Applied Physics Letters, 93, Article ID: 041118. [Google Scholar] [CrossRef] 
[46] Chow, D.H., Miles, R.H., Hasenberg, T.C., Kost, A.R., Zhang, Y.H., Dunlap, H.L. and West, L. (1995) Mid-Wave Infrared Diode Lasers Based on GaInSb/InAs and InAs/AlSb Superlattices. Applied Physics Letters, 67, 3700-3702. [Google Scholar] [CrossRef] 
[47] Canedy, C.L., Bewley, W.W., Lindle, J.R., Vurgaftman, I., Kim, C.S., Kim, M. and Meyer, J.R. (2005) Mid-Infrared “W” Diode Lasers with Improved Electrical Characteristics. Applied Physics Letters, 86, Article ID: 211105. [Google Scholar] [CrossRef] 
[48] Hader, J., Moloney, J.V., Koch, S.W., Vurgaftman, I. and Meyer, J.R. (2009) High-Power Continuous-Wave Midinfrared Type-II “W” Diode Lasers. Applied Physics Letters, 94, Article ID: 061106. [Google Scholar] [CrossRef] 
[49] Motyka, M., Sęk, G., Misiewicz, J., et al. (2009) Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells. Journal of Applied Physics Express, 2, 126505-126505. [Google Scholar] [CrossRef] 
[50] Sęk, G., Janiak, F., Motyka, M., et al. (2011) Carrier Loss Mechanisms in Type II Quantum Wells for the Active Region of GaSb-Based Mid-Infrared Interband Cascade Lasers. Optical Materials, 33, 1817-1819. [Google Scholar] [CrossRef] 
[51] Motyka, M., Ryczko, K., Sęk, G., et al. (2012) Type II Quantum Wells on GaSb Substrate Designed for Laser-Based Gas Sensing Applications in a Broad Range of Mid Infrared. Optical Materials, 34, 1107-1111. [Google Scholar] [CrossRef] 
[52] Dyksik, M., Motyka, M., Sęk, G., et al. (2015) Submonolayer Uniformity of Type II InAs/GaInSb W-Shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-Infrared Spectral Range. Nanoscale Research Letters, 10, 1-7. [Google Scholar] [CrossRef] [PubMed]
[53] Dyksik, M., Motyka, M., Weih, R., et al. (2017) Carrier Transfer between Confined and Localized States in Type II InAs/GaAsSb Quantum Wells. Optical & Quantum Electronics, 49, 59. [Google Scholar] [CrossRef] 
[54] Yu, Z., Yongbin, W., Yingqiang, X., et al. (2012) High-Temperature (T = 80℃) Operation of a 2 μm InGaSb- AlGaAsSb Quantum Well Laser. Journal of Semiconductors, 33, Article ID: 044006. [Google Scholar] [CrossRef] 
[55] Huh, J., Yun, H., Kim, D.C., et al. (2015) Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients. Nano Letters, 15, 3709-3715. [Google Scholar] [CrossRef] [PubMed]

为你推荐