X射线双晶衍射在半导体材料及结构分析中的应用
Application of X-Ray Dual Crystal Diffraction in Semiconductor Materials and Structure Analysis
DOI: 10.12677/MS.2018.81005, PDF,  被引量    国家自然科学基金支持
作者: 关志强, 唐吉龙, 魏志鹏, 牛守柱, 方 铉, 房 丹, 王登魁, 贾慧民, 王晓华：长春理工大学高功率半导体激光国家重点实验室，吉林 长春
关键词: X射线双晶衍射；晶体质量；超晶格；应变；X-Ray Dual Crystal Diffraction； Crystal Quality； Super Lattice； Strain
摘要: X射线双晶衍射是半导体材料及结构的重要分析手段，广泛应用于半导体薄膜，超晶格及量子阱等材料和器件的性能表征方面。文章综述了X射线双晶衍射在分析薄膜晶体质量，合金组分，超晶格膜厚，应变中的应用，对于半导体激光器而言，这些参数的精确测定，对指导高质量器件的开发与研制具有重要意义。
Abstract: X-ray Dual crystal diffraction is an important analytical tool for semiconductor materials and structures. It is widely used in the characterization of materials and devices such as semiconductor thin films, superlattices and quantum wells. The article reviews the application of X-ray dual crystal diffraction in the analysis of film quality, alloy composition, superlattice film thickness and strain. For semiconductor lasers, the accurate measurement of these parameters is of great importance to the development and research of high-quality devices.
文章引用：关志强, 唐吉龙, 魏志鹏, 牛守柱, 方铉, 房丹, 王登魁, 贾慧民, 王晓华. X射线双晶衍射在半导体材料及结构分析中的应用[J]. 材料科学, 2018, 8(1): 37-44. https://doi.org/10.12677/MS.2018.81005

参考文献

[1] 马礼敦. 近代X射线多晶体衍射: 实验技术与数据分析[M]. 北京: 化学工业出版社, 2004.
[2] 符贵山. X射线运动学理论及其在半导体外延材料分析中的应用[D]. 北京: 北京工业大学, 2003.
[3] 黄胜涛. 固体X射线学[M]. 北京: 高等教育出版社, 1985.
[4] Bartels, W.J., Hornstra, J. and Lobeek, D.J.W. (1986) X-Ray Diffraction of Multilayers and Superlattices. Acta Crystallographica Section A: Foundations of Crystallography, 42, 539-545.
[Google Scholar] [CrossRef] 
[5] 许振嘉, 等. 半导体的检测与分析(第二版) [M]. 北京: 科学出版社, 2007.
[6] Ashrafi, A.B.M.A., Ueta, A., Avramescu, A., et al. (2000) Growth and Characterization of Hy-pothetical Zinc-Blende ZnO Films on GaAs (001) Substrates with ZnS Buffer Layers. Applied Physics Letters, 76, 550-552.
[Google Scholar] [CrossRef] 
[7] Shim, E.S., Kang, H.S., Pang, S.S., et al. (2003) Annealing Effect on the Structural and Optical Properties of ZnO Thin Film on InP. Materials Science and Engineering: B, 102, 366-369.
[Google Scholar] [CrossRef] 
[8] Lee, W., Kim, S., Choi, S., et al. (2007) Molecular Beam Epitaxy of GaSb Layers on GaAs (001) Substrates by Using Three-Step ZnTe Buffer Layers. Journal of Crystal Growth, 305, 40-44.
[Google Scholar] [CrossRef] 
[9] Kuo, W.C., Hsieh, H.C., Chih-Hung, W., et al. (2016) High Quality GaAsEpilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer. International Journal of Photoenergy, 2016.
[10] Diaz, M., Wang, L., Li, D., et al. (2015) Tandem GaAsP/SiGe on Si Solar Cells. Solar Energy Materials and Solar Cells, 143, 113-119.
[Google Scholar] [CrossRef] 
[11] Satpati, B., Rodriguez, J.B., Trampert, A., et al. (2007) Interface Analysis of InAs/GaSb Superlattice Grown by MBE. Journal of Crystal Growth, 301, 889-892.
[Google Scholar] [CrossRef] 
[12] 郭杰, 彭震宇, 鲁正雄, 等. GaAs基短周期InAs/GaSb超晶格红外探测器研究[J]. 红外与毫米波学报, 2009, 28(3): 165-167.
[13] 徐向晏, 叶振华, 李志锋, 等. 中波双色光伏型HgCdTe红外探测器模拟研究[J]. 红外与毫米波学报, 2007, 26(3): 164-169.
[14] Wei, Y., Gin, A., Razeghi, M., et al. (2002) Type II InAs/ GaSb Superlattice Photovoltaic Detectors with Cutoff Wavelength Approaching 32 μm. Applied Physics Letters, 81, 3675-3677.
[Google Scholar] [CrossRef] 
[15] Wei, Y., Gin, A., Razeghi, M., et al. (2002) Advanced InAs/ GaSb Superlattice Photovoltaic Detectors for Very Long Wavelength Infrared Applications. Applied Physics Letters, 80, 3262-3264.
[Google Scholar] [CrossRef] 
[16] Bennett, B.R., Ancona, M.G., Boos, J.B., et al. (2008) Strained GaSb/AlAsSb Quantum Wells Forp-Channel Field-Effect Transistors. Journal of Crystal Growth, 311, 47-53.
[Google Scholar] [CrossRef] 
[17] Cervera, C., Rodriguez, J.B., Chaghi, R., et al. (2009) Characterization of Midwave Infrared InAs/GaSb Superlattice Photodiodes. Journal of Applied Physics, 106, Article ID: 024501.
[Google Scholar] [CrossRef] 
[18] 马通达, 屠海令, 胡广勇, 等. Si/SiGe/Si2SOI异质结构的同步辐射双晶貌相术和高分辨三轴晶X射线衍射[J]. 半导体学报, 2005, 26(7): 1359-1363.

为你推荐