新型稀磁半导体研究的最新进展
The Research Progress of New Diluted Magnetic Semiconductors
DOI: 10.12677/CMP.2018.71005, PDF,  被引量    国家自然科学基金支持
作者: 张莉*, 陈浩泽, 李林先, 冯山, 王少雷：中国计量大学理学院，浙江 杭州
关键词: 稀磁半导体；电荷；自旋；双位掺杂；铁基超导体；Diluted Magnetic Semiconductors； Charge； Spin； Double-Site Doping； Iron-Based Superconductor
摘要: 本文综述了基于铁基超导体系掺杂调控的新型稀磁半导体研究进展。首先从阐述稀磁半导体和铁基超导体的研究现状入手，指出研究基于铁基超导体系掺杂调控的新型稀磁半导体的优势，然后对于“111”、“1111”、“122”相，分别简述了其制备方法和晶体结构、物性测量手段和方法、理论分析和模拟计算等。特别地，对新型稀磁半导体研究中报道的最新样品合成思路和最新测量手段作了分析和说明。最后，对探索铁磁居里转变温度更高、性能更好的新型稀磁半导体作了总结和展望。
Abstract: The research progress of new diluted magnetic semiconductors which are based on the types of iron-based superconductor systems was reviewed. From the viewpoint of the three types of new diluted magnetic semiconductors, the synthesis methods and crystal structure, the property measurements and calculation methods were introduced, respectively. In particular, the new idea of synthesis and new measurement technologies were analyzed. Finally, some suggestions were presented for exploring higher ferromagnetic Curie temperatures and better characters of diluted magnetic semiconductors.
文章引用：张莉, 陈浩泽, 李林先, 冯山, 王少雷. 新型稀磁半导体研究的最新进展[J]. 凝聚态物理学进展, 2018, 7(1): 27-42. https://doi.org/10.12677/CMP.2018.71005

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